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Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. |
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О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси |
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Year |
1983 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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17 |
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3 |
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499-501 |
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shallow neutral impurities, capture, inverse distribution function, Si |
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1764 |
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Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. |
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Title |
Оже-рекомбинация свободных носителей на мелких донорах в германии |
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Journal Article |
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1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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18 |
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9 |
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1684-1686 |
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Ge, free carrier recombination |
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Russian |
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1710 |
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Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
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Title |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
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Journal Article |
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1993 |
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Opt. Lett. |
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Opt. Lett. |
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18 |
Issue |
2 |
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96-97 |
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YBCO HTS detectors |
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Abstract |
We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. |
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0146-9592 |
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PMID:19802049 |
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1660 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
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Energy spectrum of free excitons in germanium |
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1973 |
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JETP Lett. |
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JETP Lett. |
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18 |
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3 |
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93 |
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Ge, free excitons, energy spectrum |
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1734 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Title |
О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
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Journal Article |
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1984 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
18 |
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3 |
Pages |
421-425 |
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Keywords |
Si, phosphorus donors, EPR |
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Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
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1761 |
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