| Records |
| Author |
Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
| Title |
Superconductive properties of ultrathin NbN films on different substrates |
Type |
Journal Article |
| Year |
1994 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Volume  |
7 |
Issue |
6 |
Pages |
1097-1102 |
| Keywords |
NbN films |
| Abstract |
A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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Russian |
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| ISSN |
0131-5366 |
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| Notes |
Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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| Author |
Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
| Title |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
| Volume |
7 |
Issue |
4 |
Pages |
751-755 |
| Keywords |
YBCO HTS detector, nonequilibrium response |
| Abstract |
The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions. |
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| ISSN |
0896-1107 |
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no |
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Serial |
1636 |
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| Author |
Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
A fast infrared detector based on patterned YBCO thin film |
Type |
Journal Article |
| Year |
1994 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
7 |
Issue |
5 |
Pages |
321-323 |
| Keywords |
YBCO HTS detector |
| Abstract |
Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. |
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| ISSN |
0953-2048 |
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no |
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Serial |
1646 |
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| Author |
Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Heat transfer in YBaCuO thin film/sapphire substrate system |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
341-344 |
| Keywords |
YBCO films |
| Abstract |
The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model. |
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| ISSN |
0896-1107 |
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no |
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Serial |
1647 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
| Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
| Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
| Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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no |
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Serial |
1733 |
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| Author |
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
| Title |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
Type |
Journal Article |
| Year |
2021 |
Publication |
Adv. Electron. Mater. |
Abbreviated Journal |
Adv. Electron. Mater. |
| Volume |
7 |
Issue |
3 |
Pages |
2000872 |
| Keywords |
SWCNT transistors |
| Abstract |
The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. |
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| ISSN |
2199-160X |
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no |
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Serial |
1843 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N. |
| Title |
Zeeman effect in excited-states of donors in germanium |
Type |
Journal Article |
| Year |
1972 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
6 |
Issue |
3 |
Pages |
509 |
| Keywords |
Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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no |
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Serial |
1737 |
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| Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
Type |
Journal Article |
| Year |
1999 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
| Volume |
6 |
Issue |
10-12 |
Pages |
649-655 |
| Keywords |
NbN HEB mixers |
| Abstract |
The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field. |
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Edition |
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| ISSN |
0964-1807 |
ISBN |
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no |
| Call Number |
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Serial |
1564 |
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| Author |
Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
| Title |
Picosecond response of a superconducting hot-electron NbN photodetector |
Type |
Journal Article |
| Year |
1998 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
| Volume |
6 |
Issue |
7-9 |
Pages |
423-428 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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| ISSN |
0964-1807 |
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no |
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Serial |
1584 |
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| Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
| Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume |
6 |
Issue |
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Pages |
362-363 |
| Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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no |
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Serial |
1774 |
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| Author |
Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E. |
| Title |
NbN hot electron superconducting mixers for 100 GHz operation |
Type |
Journal Article |
| Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
5 |
Issue |
2 |
Pages |
3065-3068 |
| Keywords |
NbN HEB mixers |
| Abstract |
NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K. |
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| ISSN |
1051-8223 |
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| Notes |
About LO power required |
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no |
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Serial |
255 |
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| Author |
Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G. |
| Title |
Superconducting NbN terahertz detectors and infrared photon counters |
Type |
Journal Article |
| Year |
2010 |
Publication |
Вестник НГУ. Серия: физ. |
Abbreviated Journal |
Вестник НГУ. Серия: физ. |
| Volume |
5 |
Issue |
4 |
Pages |
68-72 |
| Keywords |
HEB; HEB mixer |
| Abstract |
We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films. |
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1818-7994 |
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| Notes |
УДК 538.9 |
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no |
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RPLAB @ gujma @ |
Serial |
708 |
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| Author |
Kahl, O.; Ferrari, S.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. |
| Title |
Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths |
Type |
Journal Article |
| Year |
2015 |
Publication |
Sci. Rep. |
Abbreviated Journal |
Sci. Rep. |
| Volume |
5 |
Issue |
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Pages |
10941 (1 to 11) |
| Keywords |
optical waveguides; waveguide integrated SSPD; waveguide SSPD; nanophotonics |
| Abstract |
Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present efficiencies close to unity at 1550nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noiseequivalent powers in the 10–19W/Hz–1/2 range and the timing jitter is as low as 35ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms. |
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PMID:26061283; PMCID:PMC4462017 |
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RPLAB @ kovalyuk @ |
Serial |
946 |
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Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. |
| Title |
A microwave reflection readout scheme for hot electron bolometric direct detector |
Type |
Journal Article |
| Year |
2015 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
| Volume |
5 |
Issue |
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Pages |
81-84 |
| Keywords |
HEB detectors |
| Abstract |
In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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RPLAB @ atomics90 @ |
Serial |
950 |
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| Author |
Murphy, A.; Semenov, A.; Korneev, A.; Korneeva, Y.; Gol'tsman, G.; Bezryadin, A. |
| Title |
Three temperature regimes in superconducting photon detectors: quantum, thermal and multiple phase-slips as generators of dark counts |
Type |
Journal Article |
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2015 |
Publication |
Sci. Rep. |
Abbreviated Journal |
Sci. Rep. |
| Volume |
5 |
Issue |
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Pages |
10174 (1 to 10) |
| Keywords |
SPD, SSPD, SNSPD |
| Abstract |
We perform measurements of the switching current distributions of three w approximately 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced. |
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Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA |
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2045-2322 |
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PMID:25988591; PMCID:PMC4437302 |
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1344 |
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