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Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. |
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Title |
Attojoule energy resolution of direct detector based on hot electron bolometer |
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Conference Article |
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2016 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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741 |
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012165 (1 to 5) |
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NbN HEB detector |
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We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. |
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IOP Publishing |
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Seliverstov_2016 |
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1337 |
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Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
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Title |
Nano-structured superconducting single-photon detectors |
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Journal Article |
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Year |
2004 |
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
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520 |
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1-3 |
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527-529 |
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NbN SSPD, SNSPD |
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NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications. |
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0168-9002 |
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1495 |
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Kawamura, J.; Hunter, T. R.; Tong, C. Y. E.; Blundell, R.; Papa, D. C.; Patt, F.; Peters, W.; Wilson, T.; Henkel, C.; Goltsman, G.; Gershenzon, E. |
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Title |
Ground-based terahertz CO spectroscopy towards Orion |
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Journal Article |
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2002 |
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A&A |
Abbreviated Journal |
A&A |
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394 |
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1 |
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271-274 |
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Keywords |
HEB mixers, applications |
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Using a superconductive hot-electron bolometer heterodyne receiver on the 10-m Heinrich Hertz Telescope on Mount Graham, Arizona, we have obtained velocity-resolved 1.037 THz CO () spectra toward several positions along the Orion Molecular Cloud (OMC-1) ridge. We confirm the general results of prior observations of high-J CO lines that show that the high temperature, , high density molecular gas, , is quite extended, found along a ~ region centered on BN/KL. However, our observations have significantly improved angular resolution, and with a beam size of we are able to spatially and kinematically discriminate the emission originating in the extended quiescent ridge from the very strong and broadened emission originating in the compact molecular outflow. The ridge emission very close to the BN/KL region appears to originate from two distinct clouds along the line of sight with and ≈ . The former component dominates the emission to the south of BN/KL and the latter to the north, with a turnover point coincident with or near BN/KL. Our evidence precludes a simple rotation of the inner ridge and lends support to a model in which there are multiple molecular clouds along the line of sight towards the Orion ridge. |
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322 |
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Semenov, A.; Goltsman, G.; Korneev, A. |
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Title |
Quantum detection by current carrying superconducting film |
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Journal Article |
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Year |
2001 |
Publication |
Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
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Volume |
351 |
Issue |
4 |
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349-356 |
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Keywords |
quantum detection, phase slip centers, quasiparticle diffusion |
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We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism. |
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0921-4534 |
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507 |
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Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Title |
Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors |
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Journal Article |
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Year |
2018 |
Publication |
Phys. Status Solidi B |
Abbreviated Journal |
Phys. Status Solidi B |
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Volume |
255 |
Issue |
1 |
Pages |
1700227 (1 to 6) |
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Keywords |
carbon nanotube schottky diodes, CNT |
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Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. |
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0370-1972 |
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1321 |
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Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
Issue |
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Pages |
02009 |
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grating coupler, SiO2 |
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The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform. |
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2100-014X |
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1188 |
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Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
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Conference Article |
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2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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220 |
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03012 |
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e-beam lithography, Si3N4 |
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In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. |
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2100-014X |
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1189 |
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Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Integration of nanodiamonds with NV-centers on optical silicon nitride structures |
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Conference Article |
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2019 |
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EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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220 |
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03013 |
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nanodiamonds, NV-centers, Si3N4 |
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In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources. |
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2100-014X |
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1190 |
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Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
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Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
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Journal Article |
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2020 |
Publication |
J. Luminescence |
Abbreviated Journal |
J. Luminescence |
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220 |
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117008 (1 to 7) |
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Ag2S QD, quantum dots |
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The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. |
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0022-2313 |
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1267 |
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Elezov, M.; Scherbatenko, M.; Sych, D.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Towards the fiber-optic Kennedy quantum receiver |
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Conference Article |
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2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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220 |
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03011 (1 to 2) |
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SSPD, SNSPD, Kennedy quantum receiver |
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We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit. |
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2100-014X |
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1288 |
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Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
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Title |
Response of carbon nanotube film transistor to the THz radiation |
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Conference Article |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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195 |
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05012 (1 to 2) |
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field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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1317 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
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Technology for NbN HEB based multipixel matrix of THz range |
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Conference Article |
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Year |
2018 |
Publication |
EPJ Web Conf. |
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EPJ Web Conf. |
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Volume |
195 |
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05011 |
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Keywords |
NbN HEB |
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The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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Korneev, A.; Kovalyuk, V.; An, P.; Golikov, A.; Zubkova, E.; Ferrari, S.; Kahl, O.; Pernice, W.; Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Title |
Superconducting single-photon detector for integrated waveguide spectrometer |
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Conference Article |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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Volume |
190 |
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04009 |
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SSPD, SNSPD, Si3N4 waveguides, waveguide spectrometer |
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We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector. |
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Korneeva, Y.; Vodolazov, D.; Florya, I.; Manova, N.; Smirnov, E.; Korneev, A.; Mikhailov, M.; Goltsman, G.; Klapwijk, T. M.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Single photon detection in micron scale NbN and α-MoSi superconducting strips |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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190 |
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04010 (1 to 2) |
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SSPD |
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We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection. |
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1319 |
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Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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190 |
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02004 (1 to 2) |
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waveguide SSPD, SNSPD |
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We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. |
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1320 |
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