| Records |
| Author |
Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. |
| Title |
Оже-рекомбинация свободных носителей на мелких донорах в германии |
Type |
Journal Article |
| Year |
1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume  |
18 |
Issue |
9 |
Pages |
1684-1686 |
| Keywords |
Ge, free carrier recombination |
| Abstract |
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| Language |
Russian |
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1710 |
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| Author |
Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
| Title |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
Type |
Journal Article |
| Year |
1993 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
| Volume |
18 |
Issue |
2 |
Pages |
96-97 |
| Keywords |
YBCO HTS detectors |
| Abstract |
We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. |
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English |
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| ISSN |
0146-9592 |
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| Notes |
PMID:19802049 |
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no |
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Serial |
1660 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
| Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
| Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
18 |
Issue |
3 |
Pages |
93 |
| Keywords |
Ge, free excitons, energy spectrum |
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Serial |
1734 |
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| Author |
Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
| Title |
О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
Type |
Journal Article |
| Year |
1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
18 |
Issue |
3 |
Pages |
421-425 |
| Keywords |
Si, phosphorus donors, EPR |
| Abstract |
Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
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no |
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1761 |
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| Author |
Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
| Title |
Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz |
Type |
Journal Article |
| Year |
2004 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
17 |
Issue |
5 |
Pages |
S224-S228 |
| Keywords |
NbN HEB mixers |
| Abstract |
NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance. |
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Edition |
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| ISSN |
0953-2048 |
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no |
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Serial |
558 |
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