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Home, J. (2010). Quantum entanglement: Watching correlations disappear. Nat. Phys., 6(12), 938–939.
Abstract: Engineered decoherence enables tracking of multipartite entanglement as a quantum state decays.
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Saffman, M. (2010). Quantum computing: A quantum telecom link. Nat. Phys., 6(11), 838–839.
Abstract: Converting data-carrying photons to telecommunication wavelengths enables distribution of quantum information over long distances.
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Raussendorf, R. (2010). Quantum computing: Shaking up ground states. Nat. Phys., 6(11), 840–841.
Abstract: Measurement-based quantum computation with an Affleck-Kennedy-Lieb-Tasaki state is experimentally realized for the first time.
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Buchanan, M. (2010). Body of evidence (Vol. 6).
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Kumar, S., Chan, C. W. I., Hu, Q., & Reno, J. L. (2011). A 1.8-THz quantum cascade laser operating significantly above the temperature of hw/k. Nature Physics, 7, 166–171.
Abstract: Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~planckω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9planckω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.
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