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| Author | Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. | ||||
| Title | About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers | Type | Abstract | ||
Year  |
2018 | Publication | Proc. 29th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 29th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 113 | ||
| Keywords | NbN HEB mixer | ||||
| Abstract | Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1313 | |||
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| Author | Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. | ||||
| Title | Technology for NbN HEB based multipixel matrix of THz range | Type | Conference Article | ||
| Year |
2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 05011 | |
| Keywords | NbN HEB | ||||
| Abstract | The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. | ||||
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| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1318 | |||
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| Author | Kuznetsov, K. A.; Kornienko, V. V.; Vakhtomin, Y. B.; Pentin, I. V.; Smirnov, K. V.; Kitaeva, G. K. | ||||
| Title | Generation and detection of optical-terahertz biphotons via spontaneous parametric downconversion | Type | Conference Article | ||
| Year |
2018 | Publication | Proc. ICLO | Abbreviated Journal | Proc. ICLO |
| Volume | Issue | Pages | 303 | ||
| Keywords | NbN HEB applications | ||||
| Abstract | We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed. | ||||
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| Area | Expedition | Conference | International Conference Laser Optics | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1806 | |||
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| Author | Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. | ||||
| Title | Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer | Type | Journal Article | ||
| Year |
2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 04004 (1 to 2) | |
| Keywords | NbN HEB, QCL | ||||
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| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | 3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018) | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1808 | |||
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| Author | Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. | ||||
| Title | Superconducting diamond films as perspective material for direct THz detectors | Type | Abstract | ||
| Year |
2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 82 | ||
| Keywords | KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP | ||||
| Abstract | Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1173 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year |
2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Klapwijk, T. M.; Semenov, A. V. | ||||
| Title | Engineering physics of superconducting hot-electron bolometer mixers | Type | Journal Article | ||
| Year |
2017 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 7 | Issue | 6 | Pages | 627-648 |
| Keywords | HEB mixers | ||||
| Abstract | Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2156-342X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1292 | |||
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| Author | Seliverstov, Sergey V.; Rusova, Anastasia A.; Kaurova, Natalya S.; Voronov, Boris M.; Goltsman, Gregory N. | ||||
| Title | AC-biased superconducting NbN hot-electron bolometer for frequency-domain multiplexing | Type | Conference Article | ||
| Year |
2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 120-122 | ||
| Keywords | NbN HEB mixer | ||||
| Abstract | We present the results of characterization of fast and sensitive superconducting antenna-coupled THz direct detector based on NbN hot-electron bolometer (HEB) with AC-bias. We discuss the possibility of implementation of the AC-bias for design the readout system from the multi-element arrays of HEBs using standard technique of frequency-domain multiplexing. We demonstrate experimentally that this approach does not lead to significant deterioration of the HEB sensitivity compared with the value obtained for the same detector with DC- bias. Results of a numerical calculations of the HEB responsivity at AC-bias are in a good agreement with the experiment. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1174 | |||
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| Author | Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. | ||||
| Title | Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency | Type | Conference Article | ||
| Year |
2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 147-148 | ||
| Keywords | NbN HEB mixers, GaN buffer-layer, IF bandwidth | ||||
| Abstract | In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1175 | |||
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| Author | Seliverstov, S. V.; Anfertyev, V. A.; Tretyakov, I. V.; Ozheredov, I. A.; Solyankin, P. M.; Revin, L. S.; Vaks, V. L.; Rusova, A. A.; Goltsman, G. N.; Shkurinov, A. P. | ||||
| Title | Terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser | Type | Journal Article | ||
| Year |
2017 | Publication | Radiophys. Quant. Electron. | Abbreviated Journal | Radiophys. Quant. Electron. |
| Volume | 60 | Issue | 7 | Pages | 518-524 |
| Keywords | NbN HEB mixer, QCL | ||||
| Abstract | We study characteristics of the laboratory prototype of a terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser. The results obtained demonstrate the possibility to use this receiver as a basis for creation of a high-sensitivity terahertz spectrometer, which can be used in many basic and practical applications. A significant advantage of this receiver will be the possibility of placing the mixer and heterodyne in the same cryostat, which will reduce the device dimensions considerably. The obtained experimental results are analyzed, and methods of optimizing the parameters of the receiver are proposed. | ||||
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| ISSN | 0033-8443 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1322 | |||
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