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Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. url  doi
openurl 
  Title Response of carbon nanotube film transistor to the THz radiation Type Conference Article
  Year (up) 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 195 Issue Pages 05012 (1 to 2)  
  Keywords field-effect transistor, FET, carbon nanotube, CNT  
  Abstract  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1317  
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Author Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. url  doi
openurl 
  Title Technology for NbN HEB based multipixel matrix of THz range Type Conference Article
  Year (up) 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 195 Issue Pages 05011  
  Keywords NbN HEB  
  Abstract The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1318  
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Author Korneeva, Y.; Vodolazov, D.; Florya, I.; Manova, N.; Smirnov, E.; Korneev, A.; Mikhailov, M.; Goltsman, G.; Klapwijk, T. M.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title Single photon detection in micron scale NbN and α-MoSi superconducting strips Type Conference Article
  Year (up) 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 190 Issue Pages 04010 (1 to 2)  
  Keywords SSPD  
  Abstract We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1319  
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Author Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors Type Conference Article
  Year (up) 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 190 Issue Pages 02004 (1 to 2)  
  Keywords waveguide SSPD, SNSPD  
  Abstract We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1320  
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Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors Type Journal Article
  Year (up) 2018 Publication Phys. Status Solidi B Abbreviated Journal Phys. Status Solidi B  
  Volume 255 Issue 1 Pages 1700227 (1 to 6)  
  Keywords carbon nanotube schottky diodes, CNT  
  Abstract Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1321  
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Author Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. url  openurl
  Title Electron-phonon relaxation time in ultrathin tungsten silicon film Type Miscellaneous
  Year (up) 2018 Publication arXiv Abbreviated Journal  
  Volume Issue Pages  
  Keywords WSi film  
  Abstract Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.  
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  Notes Duplicated as 1341 Approved no  
  Call Number Serial 1340  
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Author Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N. url  openurl
  Title Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film Type Miscellaneous
  Year (up) 2018 Publication arXiv Abbreviated Journal  
  Volume Issue Pages  
  Keywords WSi films, diffusion constant, SSPD, SNSPD  
  Abstract We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques.  
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  Notes Duplicated as 1305 Approved no  
  Call Number Serial 1341  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Journal Article
  Year (up) 2019 Publication Phys. Status Solidi RRL Abbreviated Journal Phys. Status Solidi RRL  
  Volume 13 Issue 9 Pages 1900187-(1-6)  
  Keywords  
  Abstract For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6254 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1149  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  isbn
openurl 
  Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
  Year (up) 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue Pages 369-371  
  Keywords silicon detector, quantum dot, IR, surface states  
  Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.  
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  Series Volume Series Issue Edition  
  ISSN ISBN 978-5-89513-451-1 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1154  
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Author Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. url  doi
openurl 
  Title Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder Type Journal Article
  Year (up) 2019 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume 12 Issue 5 Pages 054001  
  Keywords epitaxial TiN films  
  Abstract We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1166  
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Author Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. url  doi
openurl 
  Title CMOS compatible nanoantenna-nanodiamond integration Type Conference Article
  Year (up) 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1410 Issue Pages 012180  
  Keywords bull-eye antenna, hyperbolic metamaterials, NV-centers  
  Abstract Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1182  
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Author Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. url  doi
openurl 
  Title CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide Type Conference Article
  Year (up) 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1410 Issue Pages 012179  
  Keywords coarse wavelength-division multiplexing, Si3N4 rib waveguide  
  Abstract We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1183  
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Author Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G. url  doi
openurl 
  Title Efficiency of focusing grating couplers versus taper length and angle Type Conference Article
  Year (up) 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1410 Issue Pages 012181  
  Keywords focusing grating coupler  
  Abstract Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1184  
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Author Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. url  doi
openurl 
  Title Studying key principles for design and fabrication of silicon photonic-based beamforming networks Type Conference Article
  Year (up) 2019 Publication PIERS-Spring Abbreviated Journal PIERS-Spring  
  Volume Issue Pages 745-751  
  Keywords silicon photonics, TriPleX platform  
  Abstract In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.  
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  Notes Approved no  
  Call Number 9017646 Serial 1186  
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Author Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency Type Conference Article
  Year (up) 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue Pages 02009  
  Keywords grating coupler, SiO2  
  Abstract The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1188  
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