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Author Tong, C.-Y.E.; Meledin, D.V.; Marrone, D.P.; Paine, S.N.; Gibson, H.; Blundell, R. url  doi
openurl 
  Title Near field vector beam measurements at 1 THz Type Journal Article
  Year (up) 2003 Publication IEEE Microw. Compon. Lett. Abbreviated Journal  
  Volume 13 Issue 6 Pages 235-237  
  Keywords HEB, mixer, waveguide, LO power, local oscillator power, saturation effect, dynamic range  
  Abstract We have performed near-field vector beam measurements at 1.03 THz to characterize and align the receiver optics of a superconducting receiver. The signal source is a harmonic generator mounted on an X-Y translation stage. We model the measured two-dimensional complex beam pattern by a fundamental Gaussian mode, from which we derive the position of the beam center, the beam radius and the direction of propagation. By performing scans in the planes separated by 400 mm, we have confirmed that our beam pattern measurements are highly reliable.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1531-1309 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ lobanovyury @ Serial 574  
Permanent link to this record
 

 
Author Zhang, Jin; Slysz, W.; Verevkin, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G. N.; Sobolewski, R. doi  openurl
  Title Response time characterization of NbN superconducting single-photon detectors Type Journal Article
  Year (up) 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 13 Issue 2 Pages 180-183  
  Keywords SSPD jitter, SNSPD jitter  
  Abstract We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.  
  Address  
  Corporate Author Thesis  
  Publisher IEEE Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1058  
Permanent link to this record
 

 
Author Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. url  doi
openurl 
  Title Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range Type Journal Article
  Year (up) 2003 Publication IEEE Microw. Wireless Compon. Lett. Abbreviated Journal IEEE Microw. Wireless Compon. Lett.  
  Volume 13 Issue 11 Pages 493-495  
  Keywords waveguide NbN HEB mixers  
  Abstract We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1531-1309 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1509  
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Author Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. url  doi
openurl 
  Title GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits Type Journal Article
  Year (up) 2003 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering  
  Volume 69 Issue 2-4 Pages 274-278  
  Keywords NbN SSPD, SNSPD, applications  
  Abstract We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1511  
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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. url  doi
openurl 
  Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
  Year (up) 2003 Publication Electron. Lett. Abbreviated Journal Electron. Lett.  
  Volume 39 Issue 14 Pages 1086-1088  
  Keywords NbN SSPD, SNSPD, applications  
  Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0013-5194 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1512  
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