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Ozhegov, R. V., Gorshkov, K. N., Okunev, O. V., & Gol’tsman, G. N. (2010). Superconducting hot-electron bolometer mixer as element of thermal imager matrix. Tech. Phys. Lett., 36(11), 1006–1008.
Abstract: The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz.
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Elvira, D., Michon, A., Fain, B., Patriarche, G., Beaudoin, G., Robert-Philip, I., et al. (2010). Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm. Appl. Phys. Lett., 97(13), 131907 (1 to 3).
Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Смирнов, К. В., Вахтомин, Ю. Б., Смирнов, А. В., Ожегов, Р. В., Пентин, И. В., Дивочий, А. В., et al. (2010). Приемники терагерцового и инфракрасного диапазонов, основанные на тонкопленочных сверхпроводниковых наноструктурах. Вестник НГУ. Серия: Физика, 5(4).
Abstract: В работе представлены результаты разработки и создания чувствительных и ультрабыстрых приемников, основанных на тонкопленочных сверхпроводниковых наноструктурах: болометрах на эффекте электронного разогрева (HEB – hot-electron bolometer) и детекторах одиночных фотонов видимого и инфракрасного диапазонов волн (SSPD – superconducting singe-photon detector). Представлены основные принципы работы сверхпроводниковых устройств, технология создания и конструкционные особенности приемников, их основные типы и характеристики. Достигнутые рекордные значения параметров приемных систем позволяют использовать созданные приборы при решении различных научно-исследовательских задач в ближнем, среднем и дальнем ИК диапазонах волн.
This work presents the results of the development and fabrication of sensitive and ultrafast detectorsbased on thin film superconducting nanostructures: hot-electron bolometers (HEBs) and visible and infrared superconducting singe photon detectors (SSPDs). The main operational principles of the superconducting devices are presentedas well as the technology of fabrication of the detectors and their main types and parameters. The achieved record parameters of the detectors allow application of the fabricated devices to solution of various research problems in the near, middle and far IR ranges.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond., 44(11), 1427–1429.
Abstract: The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull. Russ. Acad. Sci. Phys., 74(1), 100–102.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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