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Author Ejrnaes, M.; Cristiano, R.; Quaranta, O.; Pagano, S.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol’tsman, G.
Title A cascade switching superconducting single photon detector Type Journal Article
Year (up) 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 91 Issue 26 Pages 262509 (1 to 3)
Keywords SSPD, SNSPD, parallel-wire
Abstract We have realized superconducting single photon detectors with reduced inductance and increased signal pulse amplitude. The detectors are based on a parallel connection of ultrathin NbN nanowires with a common bias inductance. When properly biased, an absorbed photon induces a cascade switch of all the parallel wires generating a signal pulse amplitude of 2mV. The parallel wire configuration lowers the detector inductance and reduces the response time well below 1ns.

This work was performed in the framework of the EU project “SINPHONIA” NMP4-CT-2005-016433.
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ISSN 0003-6951 ISBN Medium
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Call Number Serial 1418
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Author Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M.
Title Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate Type Journal Article
Year (up) 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 91 Issue 6 Pages 062504 (1 to 3)
Keywords NbN films, nanofilms
Abstract The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.

The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
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Call Number Serial 1425
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Author Kerman, A. J.; Dauler, E. A.; Yang, J. K. W.; Rosfjord, K. M.; Anant, V.; Berggren, K. K.; Gol’tsman, G. N.; Voronov, B. M.
Title Constriction-limited detection efficiency of superconducting nanowire single-photon detectors Type Journal Article
Year (up) 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 90 Issue 10 Pages 101110 (1 to 3)
Keywords SSPD, SNSPD
Abstract We investigate the source of the large variations in the observed detection efficiencies of superconducting nanowire single-photon detectors between many nominally identical devices. Through both electrical and optical measurements, we infer that these variations arise from “constrictions:” highly localized regions of the nanowires where the effective cross-sectional area for superconducting current is reduced. These constrictions limit the bias-current density to well below its critical value over the remainder of the wire, and thus prevent the detection efficiency from reaching the high values that occur in these devices when they are biased near the critical current density.

This work is sponsored by the United States Air Force under Contract No. FA8721-05-C-0002.
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Call Number Serial 1433
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Author Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G.
Title Ultrafast reset time of superconducting single photon detectors Type Journal Article
Year (up) 2008 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 92 Issue 24 Pages 241112 (1 to 3)
Keywords SSPD, SNSPD
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Notes Approved no
Call Number Serial 429
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Author Li, T. F.; Pashkin, Yu. A.; Astafiev, O.; Nakamura, Y.; Tsai, J. S.; Im, H.
Title High-frequency metallic nanomechanical resonators Type Journal Article
Year (up) 2008 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 92 Issue Pages 043112(1)-043112(3)
Keywords nanomechanical resonator, polycrystalline metal films
Abstract We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators.
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Call Number Serial 621
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Author Kataoka, T; Kajikawa, K.; Kitagawa, J.; Kadoya, Y; Takemura, Y.
Title Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm Type Journal Article
Year (up) 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue Pages 201110 (1-3)
Keywords photoconductive antenna (PCA)
Abstract The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems.
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Call Number Serial 904
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Author Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A.
Title Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm Type Journal Article
Year (up) 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 13 Pages 131907 (1 to 3)
Keywords SSPD, SNSPD, InAsP/InP quantum dots
Abstract By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Notes Approved no
Call Number Serial 1238
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Author Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N.
Title Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] Type Journal Article
Year (up) 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 96 Issue 8 Pages 089901
Keywords SSPD, SNSPD, erratum
Abstract A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Call Number Serial 1395
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Author Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory
Title Low noise and wide bandwidth of NbN hot-electron bolometer mixers Type Journal Article
Year (up) 2011 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 98 Issue Pages 033507 (1 to 3)
Keywords NbN HEB mixer
Abstract We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons.
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Call Number RPLAB @ gujma @ Serial 638
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Author Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N.
Title Current distribution and transition width in superconducting transition-edge sensors Type Journal Article
Year (up) 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 101 Issue Pages 242603
Keywords
Abstract Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.
Address TES, current distribution
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Notes Recommended by Klapwijk Approved no
Call Number Serial 930
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Author Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N.
Title A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter Type Journal Article
Year (up) 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 100 Issue 13 Pages 131104 (1 to 4)
Keywords semiconductor superlattice
Abstract The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.

This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia).
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Notes Approved no
Call Number Serial 1379
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G.
Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
Year (up) 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 103 Issue 25 Pages 252602 (1 to 4)
Keywords disordered TiN films, electron-phonon relaxation time
Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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Call Number RPLAB @ kovalyuk @ Serial 941
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G.
Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation Type Journal Article
Year (up) 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 103 Issue 18 Pages 181121 (1 to 5)
Keywords carbon nanotubes, CNT, THz radiation, SiO2 substrate
Abstract We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
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Notes Approved no
Call Number Serial 1171
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Author Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N.
Title Phase-slip lines as a resistance mechanism in transition-edge sensors Type Journal Article
Year (up) 2014 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 104 Issue Pages 042602
Keywords microbolometers, TES, phase-slip lines, PSL
Abstract The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias.
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Call Number Serial 929
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Author Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T
Title Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges Type Journal Article
Year (up) 2014 Publication Appl. Phys. Lett. Abbreviated Journal <ef><bf><bc>Appl. Phys. Lett.
Volume 104 Issue Pages 052605(1-4)
Keywords NbN HEB mixers, local oscillator power, RF nonuniform absorption
Abstract We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.
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Notes Approved no
Call Number Serial 935
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