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Author |
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Limiting characteristic of fast superconducting bolometers |
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Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1989 |
Publication |
Sov. Phys.-Tech. Phys. |
Abbreviated Journal |
Sov. Phys.-Tech. Phys. |
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Volume |
34 |
Issue |
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Pages |
195-199 |
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Keywords |
HEB |
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Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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О предельных характеристиках быстродействующих серхпроводниковых болометров |
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no |
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237 |
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Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Люлькин, А. М.; Семенов, А. Д.; Сергеев, А. В. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
О предельных характеристиках быстродействующих серхпроводниковых болометров |
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Journal Article |
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1989 |
Publication |
Журнал технической физики |
Abbreviated Journal |
Журнал технической физики |
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Volume |
59 |
Issue |
2 |
Pages |
111-120 |
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Keywords |
HEB |
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Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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Duplicated as 237 |
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238 |
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Author |
Elant'ev, A. I.; Karasik, B. S. |
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Title |
Effect of high-frequency current on Nb superconductive film in resistive state |
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Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1989 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
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Volume |
15 |
Issue |
7 |
Pages |
379-383 |
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Keywords |
Nb HEB |
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882 |
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Author |
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
23 |
Issue |
8 |
Pages |
1356-1361 |
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Keywords |
Ge, crystallography |
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Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Notes |
Duplicated as 1692 |
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Serial |
1691 |
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Author |
Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
Type |
Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1989 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
50 |
Issue |
5 |
Pages |
283-286 |
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Keywords |
YBCO HTS films |
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Abstract |
The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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1690 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
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Journal Article |
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1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
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Volume |
23 |
Issue |
8 |
Pages |
843-846 |
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Keywords |
Ge, crystallography |
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Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Notes |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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no |
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1692 |
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Author |
Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Prospects for using high-temperature superconductors to create electron bolometers |
Type |
Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume |
15 |
Issue |
14 |
Pages |
88-93 |
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Keywords |
HTS HEB |
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0320-0116 |
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Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров |
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no |
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1693 |
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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Fast-response superconducting electron bolometer |
Type |
Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume |
15 |
Issue |
3 |
Pages |
88-92 |
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Keywords |
Nb HEB |
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Abstract |
The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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1694 |
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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Limiting characteristics of fast-response superconducting bolometers |
Type |
Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1989 |
Publication |
Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Zhurnal Tekhnicheskoi Fiziki |
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Volume |
59 |
Issue |
2 |
Pages |
11-120 |
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Keywords |
HEB |
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Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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1696 |
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Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках |
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Journal Article |
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1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
23 |
Issue |
2 |
Pages |
338-345 |
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Keywords |
weakly compensated Si, Ge, doped, Hall mobility |
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Abstract |
На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. |
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1758 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state |
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Journal Article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1988 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
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Volume |
14 |
Issue |
7 |
Pages |
414-420 |
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Keywords |
HEB |
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Duplicated as 1697 |
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236 |
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Author |
Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Карасик, Б. С.; Потоскуев, С. Э. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности |
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Journal Article |
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1988 |
Publication |
Физика низких температур |
Abbreviated Journal |
Физика низких температур |
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Volume |
14 |
Issue |
7 |
Pages |
753-763 |
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HEB |
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Duplicated as 1697 |
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883 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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1988 |
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Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
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14 |
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7 |
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753-763 |
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Nb HEB |
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An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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Journal Article |
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1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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22 |
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3 |
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540-543 |
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Ge, free holes, capture |
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Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. |
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Title |
Submillimeter backward-wave-tube spectrometer-relaxometer |
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Journal Article |
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1987 |
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Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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30 |
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4 |
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131-137 |
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BWO, applications |
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A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops. |
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1699 |
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