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Glejm AV, Anisimov AA, Asnis LN, Vakhtomin YB, Divochiy AV, Egorov VI, et al. Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s. Bulletin of the Russian Academy of Sciences. Physics. 2014;78(3):171–5.
Abstract: An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described.
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Korneev AA, Divochiy AV, Vakhtomin YB, Korneeva YP, Larionov PA, Manova NN, et al. IR single-photon receiver based on ultrathin NbN superconducting film. Rus J Radio Electron. 2013;(5).
Abstract: We present our recent results in research and development of superconducting single-photon detector (SSPD). We achieved the following performance improvement: first, we developed and characterized SSPD integrated in optical cavity and enabling its illumination from the face side, not through the substrate, second, we improved the quantum efficiency of the SSPD at around 3 μm wavelength by reduction of the strip width to 40 nm, and, finally, we improved the detection efficiency of the SSPD-based single-photon receiver system up to 20% at 1550 nm and extended its wavelength range beyond 1800 nm by the usage of the fluoride ZBLAN fibres.
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Korneeva YP, Trifonov AV, Vakhtomin YB, Smirnov KV. Design of resonator for superconducting single-photon detector. Rus J Radio Electron. 2011;(12).
Abstract: A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance.
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Moshkova MA, Divochiy AV, Morozov PV, Antipov AV, Vakhtomin YB, Smirnov KV. Characterization of topologies of superconducting photon number resolving detectors. In: Proc. 8th Int. Conf. Photonics and Information Optics.; 2019. p. 465–6.
Abstract: Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
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Ozhegov RV, Smirnov AV, Vakhtomin YB, Smirnov KV, Divochiy AV, Goltsman GN. Ultrafast superconducting bolometer receivers for terahertz applications [abstract]. In: Proc. PIERS. 777 Concord Avenue, Suite 207 Cambridge, MA 02138: The Electromagnetics Academy; 2009. 867.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
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Smirnov KV, Vakhtomin YB, Divochiy AV, Ozhegov RV, Pentin IV, Gol'tsman GN. Infrared and terahertz detectors on basis of superconducting nanostructures. In: IEEE, editor. Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf.; 2010. p. 823–4.
Abstract: Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.
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Smirnov KV, Vakhtomin YB, Divochiy AV, Ozhegov RV, Pentin IV, Slivinskaya EV, et al. Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures [abstract]. In: Proc. Progress In Electromagnetics Research Symp. Moscow, Russia; 2009. p. 863–4.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
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Zolotov PI, Vakhtomin YB, Divochiy AV, Seleznev VA, Smirnov KV. Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc 5th Int Conf Photonics and Information Optics. 2016:115–6.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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