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Author ![sorted by Author field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
Title |
Year |
Publication |
Links |
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Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr |
Transition-edge sensors based on superconducting nanowires |
2006 |
Proc. APS March Meeting |
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Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. |
Phase-slip lines as a resistance mechanism in transition-edge sensors |
2014 |
Appl. Phys. Lett. |
|
|
Galeazzi, Massimiliano |
Fundamental noise processes in TES devices |
2011 |
IEEE Trans. Appl. Supercond. |
|
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Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
|
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Absorption spectra in electron transitions between excited states of impurities in germanium |
1975 |
JETP Lett. |
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Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Population of excited-states of small admixtures in germanium |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
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Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. |
THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites |
2020 |
Polymers (Basel) |
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