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Johnson MA, Betz AL, McLaren RA, Townes CH, Sutton EC. Nonthermal 10 micron CO2 emission lines in the atmospheres of Mars and Venus. A&A. 1976;208:145.
Keywords: carbon dioxide, emission spectra, infrared spectra, mars atmosphere, nonthermal radiation, optical heterodyning, planetary radiation, venus atmosphere, absorption spectra, energy transfer, line spectra, molecular absorption, molecular collisions, near infrared radiation, solar flux
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Rothermel H, Käufl HU, Schrey U, Drapatz S. Thermal structure of the Martian mesosphere. A&A. 1988;196:296–300.
Keywords: atmospheric temperature, carbon dioxide, infrared spectroscopy, mars atmosphere, mesosphere, emission spectra, line spectra, spatial resolution, mars, atmosphere, mesosphere, structure, thermal properties, spectra, spectroscopy, earth-based observations, temperature, patterns, infrared, polar regions, wavelengths, equipment, procedure, carbon dioxide, emissions
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Doi Y, Wang Z, Ueda T, Nickels P, Komiyama S, Patrashin M, et al. CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument. SPICA. 2009;(SPICA Workshop 2009).
Abstract: We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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Mitin V, Antipov A, Sergeev A, Vagidov N, Eason D, Strasser G. Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers. Nanoscale res lett. 2011;6(1):6.
Abstract: Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.
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González FJ, Boreman GD. Comparison of dipole, bowtie, spiral and log-periodic IR antennas. Inf Phys & Technol. 2005;46(5):418–28.
Abstract: Antenna-coupled microbolometers use planar lithographic antennas to couple infrared radiation into a bolometer with sub-micron dimensions. In this paper four different types of infrared antennas were fabricated on thin grounded-substrates and coupled to microbolometers. Dipole, bowtie, spiral and log-periodic IR antenna-coupled detectors were measured at 10.6 μm and their performance compared. A new method to calculate the radiation efficiency based on the spatial and angular response of infrared antennas is presented and used to evaluate their performance. The calculated radiation efficiency for the dipole, bowtie, spiral and log-periodic IR antennas was 20%, 37%, 25% and 46% respectively. A dipole-length study was performed and shows that the quasistatic value of the effective permittivity accurately describes the incident wavelength in the substrate at infrared frequencies for antennas on a thin substrate.
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Ferrari S, Kovalyuk V, Hartmann W, Vetter A, Kahl O, Lee C, et al. Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors. Opt Express. 2017;25(8):8739–50.
Abstract: We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
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Pyatkov F, Khasminskaya S, Kovalyuk V, Hennrich F, Kappes MM, Goltsman GN, et al. Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers. Beilstein J Nanotechnol. 2017;8:38–44.
Abstract: Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.
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Gershenson ME, Gong D, Sato T, Karasik BS, Sergeev AV. Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures. Appl. Phys. Lett.. 2001;79:2049–51.
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