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Yagoubov PL, Hoogeveen RWM, Maurellis AM, Mair U, Krocka M, Wagner G, et al. TELIS — development of a new balloon borne THz/submm heterodyne limb sounder. In: Proc. 14th Int. Symp. Space Terahertz Technol.; 2003. p. 204–14.
Abstract: We present a design concept for a new state-of-the-art balloon borne atmospheric monitor that will allow enhanced limb sounding of the Earth's atmosphere within the submillimeter and far-infrared wavelength spectral range: TELIS, TErahertz and submm LImb Sounder. The instrument is being developed by a consortium of major European institutes that includes the Space Research Organisation of the Netherlands (SRON), the Rutherford Appleton Laboratory (RAL) in the United Kingdom and the Deutschen Zentrum far Luft- und Raumfahrt (DLR) in Germany (lead institute). TELIS will utilise state-of-the-art superconducting heterodyne technology and is designed to be a compact, lightweight instrument capable of providing broad spectral coverage, high spectral resolution and long flight duration (-24 hours duration during a single flight campaign). The combination of high sensitivity and extensive flight duration will allow evaluation of the diurnal variation of key atmospheric constituents such as OH, HO,, C10, BrO together will longer lived constituents such as 0 3 , HCL and N 2 0. Furthermore, TELIS will share a common balloon platform to that of the MIPAS-B Fourier Transform Spectrometer, developed by the Institute of Meteorology and Climate research of the University of Karlsruhe, Germany. MIPAS-B will provide simultaneous and complementary spectral measurements over an extended spectral range. The combination of the TELIS and MIPAS instruments will provide atmospheric scientists with a very powerful observational tool. TELIS will serve as a testbed for new cryogenic heterodyne detection techniques, and as such it will act as a prelude to future spacebome instruments planned by the European Space Agency (ESA).
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Tong C-YE, Meledin D, Blundell R, Erickson N, Kawamura J, Mehdi I, et al. A 1.5 THz hot-electron bolometer mixer operated by a planar diode-based local oscillator [abstract]. In: Proc. 14th Int. Symp. Space Terahertz Technol.; 2003. 286.
Abstract: We describe a 1.5 THz heterodyne receiver based on a superconductin g hot-electron bolometer mixer, which is pumped by an all-solid-state local oscillator chain. The bolometer is fabricated from a 3.5 nm-thick niobium nitride film deposited on a quartz substrate with a 200 nm-thick magnesium oxide buffer layer. The bolometer measures 0.15 fun in width and 1.5 1..tm in length. The chip consisting of the bolometer and mixer circuitry is incorporated in a fixed-tuned waveguide mixer block with a corru g ated feed horn. The local oscillator unit comprises of a cascade of four planar doublers followin g a MMIC-based W-band power amplifier. The local oscillator is coupled to the mixer using a Martin-Puplett interferometer. The local oscillator output power needed for optimal receiver performance is approximately 1 to 2 11W, and the chain is able to provide this power at a number of frequency points between 1.45 and 1.56 THz. By terminating the rf input with room temperature and 77 K loads, a Y-factor of 1.11 (DSB) has been measured at a local oscillator frequency of 1.476 THz at 3 GHz intermediate frequency.
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Smirnov KV, Vachtomin YB, Antipov SV, Maslennikov SN, Kaurova NS, Drakinsky VN, et al. Noise and gain performance of spiral antenna coupled HEB mixers at 0.7 THz and 2.5 THz. In: Proc. 14th Int. Symp. Space Terahertz Technol.; 2003. p. 405–12.
Abstract: Noise and gain performance of hot electron bolometer (HEB) mixers based on ultrathin superconducting NbN films integrated with a spiral antenna was studied. The noise temperature measurements for two samples with different active area of 3 p.m x 0.24 .tni and 1.3 1..tm x 0.12 1.tm were performed at frequencies 0.7 THz and 2.5 THz. The best receiver noise temperatures 370 K and 1600 K, respectively, have been found at these frequencies. The influence of contact resistance between the superconductor and the antenna terminals on the noise temperature of HEB is discussed. The noise and gain bandwidth of 5GHz and 4.2 GHz, respectively, are demonstrated for similar HEB mixer at 0.75 THz.
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Semenov A, Richter H, Hübers H-W, Smirnov K, Voronov B, Gol'tsman G. Development of terahertz superconducting hot-electron bolometer mixers. In: Proc. 6th European Conf. Appl. Supercond. Vol 181.; 2003. p. 2960–5.
Abstract: We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer.
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Meledin D, Tong C-YE, Blundell R, Goltsman G. Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range. IEEE Microw Wireless Compon Lett. 2003;13(11):493–5.
Abstract: We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz.
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Korneev A, Lipatov A, Okunev O, Chulkova G, Smirnov K, Gol’tsman G, et al. GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits. Microelectronic Engineering. 2003;69(2-4):274–8.
Abstract: We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Zhang J, Boiadjieva N, Chulkova G, Deslandes H, Gol'tsman GN, Korneev A, et al. Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron Lett. 2003;39(14):1086–8.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Gol’tsman GN, Smirnov K, Kouminov P, Voronov B, Kaurova N, Drakinsky V, et al. Fabrication of nanostructured superconducting single-photon detectors. IEEE Trans Appl Supercond. 2003;13(2):192–5.
Abstract: Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Zhang J, Słysz W, Pearlman A, Verevkin A, Sobolewski R, Okunev O, et al. Time delay of resistive-state formation in superconducting stripes excited by single optical photons. Phys Rev B. 2003;67(13):132508 (1 to 4).
Abstract: We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Vakhtomin YB, Finkel MI, Antipov SV, Smirnov KV, Kaurova NS, Drakinskii VN, et al. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J of communications technol & electronics. 2003;48(6):671–5.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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