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Sidorova MV, Divochiy AV, Vakhtomin YB, Smirnov KV. Ultrafast superconducting single-photon detector with a reduced active area coupled to a tapered lensed single-mode fiber. J. Nanophoton.. 2015;9(1):093051.
Abstract: This paper presents an ultrafast niobium nitride (NbN) superconducting single-photon detector (SSPD) with an active area of 3×3 μm2 that offers better timing performance metrics than the previous SSPD with an active area of 7×7 μm2. The improved SSPD demonstrates a record timing jitter (<25 ps), an ultrashort recovery time (<2 ns), an extremely low dark count rate, and a high detection efficiency in a wide spectral range from visible part to near infrared. The record parameters were obtained due to the development of a new technique providing effective optical coupling between a detector with a reduced active area and a standard single-mode telecommunication fiber. The advantages of the new approach are experimentally confirmed by taking electro-optical measurements.
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Smirnov K, Vachtomin Y, Divochiy A, Antipov A, Goltsman G. Dependence of dark count rates in superconducting single photon detectors on the filtering effect of standard single mode optical fibers. Appl Phys Express. 2015;8(2):022501 (1 to 4).
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Smirnov KV, Vakhtomin YB, Divochiy AV, Ozhegov RV, Pentin IV, Slivinskaya EV, et al. Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures [abstract]. In: Proc. Progress In Electromagnetics Research Symp. Moscow, Russia; 2009. p. 863–4.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
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Sidorova MV, Divochiy A, Vakhtomin YB, Smirnov KV. Ultrafast superconducting single-photon detector with reduced-size active area coupled to a tapered lensed single-mode fiber. In: International Society for Optics and Photonics, editor. Proc. SPIE. Vol 9504.; 2015. 950408 (1 to 9).
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Kitaygorsky J, Zhang J, Verevkin A, Sergeev A, Korneev A, Matvienko V, et al. Origin of dark counts in nanostructured NbN single-photon detectors. IEEE Trans Appl Supercond. 2005;15(2):545–8.
Abstract: We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations.
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Shcheslavskiy V, Morozov P, Divochiy A, Vakhtomin Y, Smirnov K, Becker W. Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector. Rev. Sci. Instrum.. 2016;87:053117 (1 to 5).
Abstract: Time resolution is one of the main characteristics of the single photon detectors besides quantum efficiency and dark count rate. We demonstrate here an ultrafast time-correlated single photon counting (TCSPC) setup consisting of a newly developed single photon counting board SPC-150NX and a superconducting NbN single photon detector with a sensitive area of 7 × 7 μm. The combination delivers a record instrument response function with a full width at half maximum of 17.8 ps and system quantum efficiency ~5% at wavelength of 1560 nm. A calculation of the root mean square value of the timing jitter for channels with counts more than 1% of the peak value yielded about 7.6 ps. The setup has also good timing stability of the detector–TCSPC board.
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Vorobyov VV, Kazakov AY, Soshenko VV, Korneev AA, Shalaginov MY, Bolshedvorskii SV, et al. Superconducting detector for visible and near-infrared quantum emitters [Invited]. Opt Mater Express. 2017;7(2):513–26.
Abstract: Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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Seleznev VA, Divochiy AV, Vakhtomin YB, Morozov PV, Zolotov PI, Vasil'ev DD, et al. Superconducting detector of IR single-photons based on thin WSi films. In: J. Phys.: Conf. Ser. Vol 737.; 2016. 012032.
Abstract: We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Gol’tsman GN, Verevkin AA, et al. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond. 2010;44(11):1427–9.
Abstract: The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
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Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Gol’tsman GN, Verevkin AA, et al. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull Russ Acad Sci Phys. 2010;74(1):100–2.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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