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Author |
Title |
Year |
Publication |
DOI  |
Links |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
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|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
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Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Absorption spectra in electron transitions between excited states of impurities in germanium |
1975 |
JETP Lett. |
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Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
2000 |
Microelectronics Reliability |
10.1016/S0026-2714(00)00137-2 |
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Hartogh, P.; Jarchow, C.; Lellouch, E.; de Val-Borro, M.; Rengel, M.; Moreno, R.; Medvedev, A. S.; Sagawa, H.; Swinyard, B. M.; Cavalié, T.; Lis, D. C.; BłÄ™cka, M. I.; Banaszkiewicz, M.; Bockelée-Morvan, D.; Crovisier, J.; Encrenaz, T.; Küppers, M.; Lara, L.-M.; Szutowicz, S.; Vandenbussche, B.; Bensch, F.; Bergin, E. A.; Billebaud, F.; Biver, N.; Blake, G. A.; Blommaert, J. A. D. L.; Cernicharo, J.; Decin, L.; Encrenaz, P.; Feuchtgruber, H.; Fulton, T.; de Graauw, T.; Jehin, E.; Kidger, M.; Lorente, R.; Naylor, D. A.; Portyankina, G.; Sánchez-Portal, M.; Schieder, R.; Sidher, S.; Thomas, N.; Verdugo, E.; Waelkens, C.; Whyborn, N.; Teyssier, D.; Helmich, F.; Roelfsema, P.; Stutzki, J.; LeDuc, H. G.; Stern, J. A. |
Herschel/HIFI observations of Mars: First detection of O2 at submillimetre wavelengths and upper limits on HCl and H2O2 |
2010 |
Astron. Astrophys. |
10.1051/0004-6361/201015160 |
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Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. |
Phase-slip lines as a resistance mechanism in transition-edge sensors |
2014 |
Appl. Phys. Lett. |
10.1063/1.4863664 |
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Steudle, Gesine A.; Schietinger, Stefan; Höckel, David; Dorenbos, Sander N.; Zadeh, Iman E.; Zwiller, Valery; Benson, Oliver |
Measuring the quantum nature of light with a single source and a single detector |
2012 |
Phys. Rev. A |
10.1103/PhysRevA.86.053814 |
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Stellari, Franco; Song, Peilin |
Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
2005 |
Proc. 12th IPFA |
10.1109/IPFA.2005.1469119 |
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