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Author
Tretyakov, I.
;
Kaurova, N.
;
Raybchun, S.
;
Goltsman, G. N.
;
Silaev, A. A.
Title
Technology for NbN HEB based multipixel matrix of THz range
Type
Conference Article
Year
2018
Publication
EPJ Web Conf.
Abbreviated Journal
EPJ Web Conf.
Volume
195
Issue
Pages
05011
Keywords
NbN HEB
Abstract
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
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2100-014X
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no
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1318
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