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Smirnov AV, Karmantsov MS, Smirnov KV, Vakhtomin YB, Masterov DV, Tarkhov MA, et al. Terahertz response of thin-film YBCO bolometers. Tech Phys. 2012;57(12):1716–9.
Abstract: The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed.
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Seleznev VA, Divochiy AV, Vakhtomin YB, Morozov PV, Zolotov PI, Vasil'ev DD, et al. Superconducting detector of IR single-photons based on thin WSi films. In: J. Phys.: Conf. Ser. Vol 737.; 2016. 012032.
Abstract: We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Vasilev DD, Malevannaya EI, Moiseev KM, Zolotov PI, Antipov AV, Vakhtomin YB, et al. Influence of deposited material energy on superconducting properties of the WSi films. In: IOP Conf. Ser.: Mater. Sci. Eng. Vol 781.; 2020. 012013 (1 to 6).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Romanov NR, Zolotov PI, Smirnov KV. Development of disordered ultra-thin superconducting vanadium nitride films. In: Proc. 8th Int. Conf. Photonics and Information Optics.; 2019. p. 425–6.
Abstract: We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
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Zolotov PI, Divochiy AV, Vakhtomin YB, Lubenchenko AV, Morozov PV, Shurkaeva IV, et al. Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051030.
Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
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Romanov NR, Zolotov PI, Vakhtomin YB, Divochiy AV, Smirnov KV. Electron diffusivity measurements of VN superconducting single-photon detectors. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051032.
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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Smirnov KV, Vachtomin YB, Ozhegov RV, Pentin IV, Slivinskaya EV, Korneev AA, et al. Fiber coupled single photon receivers based on superconducting detectors for quantum communications and quantum cryptography. In: Tománek P, Senderáková D, Hrabovský M, editors. Proc. SPIE. Vol 7138. Spie; 2008. 713827 (1 to 6).
Abstract: At present superconducting detectors become increasingly attractive for various practical applications. In this paper we present results on the depelopment of fiber coupled receiver systems for the registration of IR single photons, optimized for telecommunication and quantum-cryptography. These receiver systems were developed on the basis of superconducting single photon detectors (SSPD) of VIS and IR wavelength ranges. The core of the SSPD is a narrow ( 100 nm) and long ( 0,5 mm) strip in the form of a meander which is patterned from a 4-nm-thick NbN film (TC=10-11 K, jC= 5-7•106 A/cm2); the sensitive area dimensions are 10×10 μm2. The main problem to be solved while the receiver system development was optical coupling of a single-mode fiber (9 microns in diameter) with the SSPD sensitive area. Characteristics of the developed system at the optical input are as follows: quantum efficiency >10 % (at 1.3 μm), >4 % (at 1.55 μm); dark counts rate ≤1 s-1; duration of voltage pulse ≤5 ns; jitter ≤40 ps. The receiver systems have either one or two identical channels (for the case of carrying out correlation measurements) and are made as an insert in a helium storage Dewar.
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Elvira D, Michon A, Fain B, Patriarche G, Beaudoin G, Robert-Philip I, et al. Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm. Appl Phys Lett. 2010;97(13):131907 (1 to 3).
Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Smirnov KV, Vakhtomin YB, Divochiy AV, Ozhegov RV, Pentin IV, Gol'tsman GN. Infrared and terahertz detectors on basis of superconducting nanostructures. In: IEEE, editor. Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf.; 2010. p. 823–4.
Abstract: Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.
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Zinoni C, Alloing B, Li LH, Marsili F, Fiore A, Lunghi L, et al. Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)]. Appl Phys Lett. 2010;96(8):089901.
Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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