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Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора |
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Conference Article |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
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201-202 |
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SSPD |
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Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения. |
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Москва |
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МИЭМ НИУ ВШЭ |
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Russian |
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1804 |
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Author |
Золотов, Ф. И.; Смирнов, К. В. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия |
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Conference Article |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
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204-205 |
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VN films |
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В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. |
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Москва |
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МИЭМ НИУ ВШЭ |
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1805 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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32 |
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7 |
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075003 |
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NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
![find book details (via ISBN) isbn](https://db.rplab.ru/refbase/img/isbn.gif)
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Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Проходцов, А. И.; Голиков, А. Д.; Ан, П. П.; Ковалюк, В. В.; Гольцман, Г. Н. |
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Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния |
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Conference Article |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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201-203 |
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integrated optics, silicon nitride, focusing grating coupler |
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В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния. |
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Duplicated as 1188 |
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1282 |
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Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. |
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Практические особенности работы оптоволоконного квантового приемника Кеннеди |
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Conference Article |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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303-305 |
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Kennedy quantum receiver, fiber, quantum optics, standard quantum limit, superconducting nanowire single-photon detector, coherent detection |
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Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела. |
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Russian |
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Duplicated as 1288 |
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1283 |
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Елманов, И. А.; Елманова, А. В.; Голиков, А. Д.; Комракова, С. А.; Каурова, Н. С.; Ковалюк, В. В.; Гольцман, Г. Н. |
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Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния |
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Conference Article |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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306-308 |
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Si3N4, e-beam lithography, EBL |
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В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния. |
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Duplicated as 1189 |
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1284 |
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Елманова, А.; Елманов, И.; Комракова, С.; Голиков, А.; Джавадзадэ, Д.; Воробьёв, В.; Большедворский, С.; Сошенко, В.; Акимов, А.; Ковалюк, В.; Гольцман, Г. |
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Title |
Способ интеграции наноалмазов с нанофотонными устройствами из нитрида кремния |
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Conference Article |
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Year |
2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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309-311 |
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nanodiamonds, NV-centers |
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В работе были разработаны оптические структуры из нитрида кремния для дальнейшего размещения на них наноалмазов с NV-центрами, опробованы различные методики нанесения раствора наноалмазов и выбрана оптимальная. Работа имеет практическое значение в области нанофотоники и создании квантово-оптических устройств с однофотонными источниками. |
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Duplicated as 1190 |
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1285 |
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Author |
Goltsman, G. |
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Title |
Quantum-photonic integrated circuits |
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Conference Article |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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22-23 |
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WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector |
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We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. |
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1287 |
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Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures |
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Abstract |
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2019 |
Publication ![sorted by Publication field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Proc. Amorphous and Nanostructured Chalcogenides |
Abbreviated Journal |
Proc. Amorphous and Nanostructured Chalcogenides |
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47-48 |
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optical waveguides |
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The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. |
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Technical University of Moldova |
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1281 |
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