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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Okunev O, et al. Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In: CLEO/QELS. Optical Society of America; 2003. Cmv4.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Korneeva YP, Mikhailov MY, Pershin YP, Manova NN, Divochiy AV, Vakhtomin YB, et al. Superconducting single-photon detector made of MoSi film. Supercond Sci Technol. 2014;27(9):095012.
Abstract: We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film.
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Zhang J, Slysz W, Verevkin A, Okunev O, Chulkova G, Korneev A, et al. Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond.. 2003;13(2):180–3.
Abstract: We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
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Korneev A, Semenov A, Vodolazov D, Gol’tsman GN, Sobolewski R. Physics and operation of superconducting single-photon devices. In: Wördenweber R, Moshchalkov V, Bending S, Tafuri F, editors. Superconductors at the Nanoscale. De Gruyter; 2017. p. 279–308.
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Tarkhov M, Claudon J, Poizat JP, Korneev A, Divochiy A, Minaeva O, et al. Ultrafast reset time of superconducting single photon detectors. Appl Phys Lett. 2008;92(24):241112 (1 to 3).
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Korneev A, Minaeva O, Rubtsova I, Milostnaya I, Chulkova G, Voronov B, et al. Superconducting single-photon ultrathin NbN film detector. Quantum Electronics. 2005;35(8):698–700.
Abstract: Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.
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Gol'tsman G, Korneev A, Minaeva O, Antipov A, Divochiy A, Kaurova N, et al. Middle-infrared to visible-light ultrafast superconducting single-photon detector. In: Proc. ASC. Seattle; 2006.
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Delacour C, Claudon J, Poizat J-P, Pannetier B, Bouchiat V, de Lamaestre RE, et al. Superconducting single photon detectors made by local oxidation with an atomic force microscope. Appl Phys Lett. 2007;90(19):191116 (1 t0 3).
Abstract: The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433.
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Smirnov K, Korneev A, Minaeva O, Divochiy A, Tarkhov M, Ryabchun S, et al. Ultrathin NbN film superconducting single-photon detector array. In: J. Phys.: Conf. Ser. Vol 61.; 2007. p. 1081–5.
Abstract: We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes.
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Ferrari S, Kovalyuk V, Hartmann W, Vetter A, Kahl O, Lee C, et al. Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors. Opt Express. 2017;25(8):8739–50.
Abstract: We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
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