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Gayduchenko IA, Moskotin MV, Matyushkin YE, Rybin MG, Obraztsova ED, Ryzhii VI, et al. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts. In: Materials Today: Proc. Vol 5.; 2018. p. 27301–6.
Abstract: We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
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Belosevich VV, Gayduchenko IA, Titova NA, Zhukova ES, Goltsman GN, Fedorov GE, et al. Response of carbon nanotube film transistor to the THz radiation. In: EPJ Web Conf. Vol 195.; 2018. 05012 (1 to 2).
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Tretyakov I, Kaurova N, Raybchun S, Goltsman GN, Silaev AA. Technology for NbN HEB based multipixel matrix of THz range. In: EPJ Web Conf. Vol 195.; 2018. 05011.
Abstract: The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
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Korneeva Y, Vodolazov D, Florya I, Manova N, Smirnov E, Korneev A, et al. Single photon detection in micron scale NbN and α-MoSi superconducting strips. In: EPJ Web Conf. Vol 190.; 2018. 04010 (1 to 2).
Abstract: We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.
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Goltsman G, Naumov AV, Gladush MG, Karimullin KR. Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors. In: EPJ Web Conf. Vol 190.; 2018. 02004 (1 to 2).
Abstract: We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Goltsman G. Superconducting thin film as infrared heterodyne and direct detectors. In: 16th ISEC.; 2017. p. 1–3.
Abstract: We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.
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Elezov MS, Ozhegov RV, Goltsman GN, Makarov V, Vinogradov EA, Naumov AV, et al. Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system. In: EPJ Web Conf. Vol 132.; 2017. 01004 (1 to 2).
Abstract: Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
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Anfertev V, Vaks V, Revin L, Pentin I, Tretyakov I, Goltsman G, et al. High resolution THz gas spectrometer based on semiconductor and superconductor devices. In: EPJ Web Conf. Vol 132.; 2017. 02001 (1 to 2).
Abstract: The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
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Gayduchenko IA, Fedorov GE, Stepanova TS, Titova N, Voronov BM, But D, et al. Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation. In: J. Phys.: Conf. Ser. Vol 741.; 2016. 012143 (1 to 6).
Abstract: Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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Seliverstov SV, Rusova AA, Kaurova NS, Voronov BM, Goltsman GN. Attojoule energy resolution of direct detector based on hot electron bolometer. In: J. Phys.: Conf. Ser. Vol 741. IOP Publishing; 2016. 012165 (1 to 5).
Abstract: We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses.
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