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Korneev A, Divochiy A, Marsili F, Bitauld D, Fiore A, Seleznev V, et al. Superconducting photon number resolving counter for near infrared applications. In: Tománek P, Senderáková D, Hrabovský M, editors. Proc. SPIE. Vol 7138. Spie; 2008. 713828 (1 to 5).
Abstract: We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate.
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Korneev A, Minaeva O, Divochiy A, Antipov A, Kaurova N, Seleznev V, et al. Ultrafast and high quantum efficiency large-area superconducting single-photon detectors. In: Dusek M, Hillery MS, Schleich WP, Prochazka I, Migdall AL, Pauchard A, editors. Proc. SPIE. Vol 6583. Spie; 2007. 65830I (1 to 9).
Abstract: We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped 0.5-mm-long and 100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of 30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.
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Slysz W, Wegrzecki M, Bar J, Grabiec P, Górska M, Latta C, et al. Fiber-coupled quantum-communications receiver based on two NbN superconducting single-photon detectors. In: Rogalski A, Dereniak EL, Sizov FF, editors. Proc. SPIE. Vol 5957. SPIE; 2005. 59571K (1 to 10).
Abstract: We present the design and performance of a novel, two-channel single-photon receiver, based on two fiber-coupled NbN superconducting single-photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders covering an area of 100 μm2 and are known for ultrafast and efficient counting of single, visible-to-infrared photons. Their operation has been explained within a phenomenological hot-electron photoresponse model. Our receiver is intended for fiber-based quantum cryptography and communication systems, operational at near-infrared (NIR) telecommunication wavelengths, λ = 1.3 μm and λ = 1.55 μm. Coupling between the NbN detector and a single-mode optical fiber was achieved using a specially designed, micromechanical photoresist ring, positioned directly over the SSPD active area. The positioning accuracy of the ring was below 1 μm. The receiver with SSPDs was placed (immersed) in a standard liquid-helium transport Dewar and kept without interruption for over two months at 4.2 K. At the same time, the optical fiber inputs and electrical outputs were kept at room temperature. Our best system reached a system quantum efficiency of up to 0.3 % in the NIR radiation range, with the detector coupling efficiency of about 30 %. The response time was measured to be about 250 ps and was limited by our read-out electronics. The measured jitter was close to 35 ps. The presented performance parameters show that our NIR single photon detectors are suitable for practical quantum cryptography and for applications in quantum-correlation experiments.
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Thiébeau C, Courtois D, Delahaigue A, Corre H, Mouanda JC, Fayt A. Dual-beam laser heterodyne spectrometer: Ethylene absorption spectrum in the 10 μm range. Appl Phys B. 1988;47(4):313–8.
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Marsili F, Bitauld D, Divochiy A, Gaggero A, Leoni R, Mattioli F, et al. Superconducting nanowire photon number resolving detector at telecom wavelength. In: CLEO/QELS. Optical Society of America; 2008. Qmj1 (1 to 2).
Abstract: We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches.
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Beck M, Klammer M, Rousseau I, Gol’tsman GN, Diamant I, Dagan Y, et al. Probing superconducting gap dynamics with THz pulses. In: CLEO. Optical Society of America; 2015. SM3H.3 (1 to 2).
Abstract: We studied superconducting gap dynamics in a BCS superconductor NbN and electron doped cuprate superconductor PCCO following excitation with near-infrared (NIR) and narrow band THz pulses. Systematic studies on PCCO imply very selective electron-phonon coupling.
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Verevkin A, Slysz W, Pearlman A, Zhang J, Sobolewski R, Okunev O, et al. Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors. In: CLEO/QELS. Optical Society of America; 2003. CThM8.
Abstract: We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps.
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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Okunev O, et al. Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In: CLEO/QELS. Optical Society of America; 2003. Cmv4.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Tretyakov I, Svyatodukh S, Perepelitsa A, Ryabchun S, Kaurova N, Shurakov A, et al. Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector. Nanomaterials (Basel). 2020;10(5):1–12.
Abstract: In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
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Pyatkov F, Khasminskaya S, Kovalyuk V, Hennrich F, Kappes MM, Goltsman GN, et al. Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers. Beilstein J Nanotechnol. 2017;8:38–44.
Abstract: Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.
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