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Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Gol’tsman GN, Verevkin AA, et al. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull Russ Acad Sci Phys. 2010;74(1):100–2.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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Gol'tsman G, Maslennikov S, Finkel M, Antipov S, Kaurova N, Grishina E, et al. Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer. In: Proc. MRS. Vol 935.; 2006. 210 (1 to 6).
Abstract: Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.
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Ozhegov RV, Okunev OV, Gol’tsman GN, Filippenko LV, Koshelets VP. Noise equivalent temperature difference of a superconducting integrated terahertz receiver. J Commun Technol Electron. 2009;54(6):716–20.
Abstract: The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased.
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Tret’yakov IV, Ryabchun SA, Kaurova NS, Larionov PA, Lobastova AA, Voronov BM, et al. Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer. Tech Phys Lett. 2010;36(12):1103–5.
Abstract: Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
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Ozhegov RV, Gorshkov KN, Okunev OV, Gol’tsman GN. Superconducting hot-electron bolometer mixer as element of thermal imager matrix. Tech Phys Lett. 2010;36(11):1006–8.
Abstract: The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz.
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Polyakova ON, Tikhonov VV, Dzardanov AL, Boyarskii DA, Gol’tsman GN. Dielectric characteristics of ore minerals in a 10–40 GHz frequency range. Tech Phys Lett. 2008;34(11):967–70.
Abstract: A new approach to investigation of the complex dielectric permittivity of both nonmetallic and ore minerals in the microwave frequency range is proposed. Using this approach, data on the complex permittivity of sphalerite, magnetite, and labradorite in a 10–40 GHz frequency range have been obtained for the first time. A method is proposed for calculating the complex permittivity from experimentally measured frequency dependences of the reflection and transmission coefficients of a plane-parallel plate of a given mineral. Approximate expressions that can be used for calculations of the complex refractive index and permittivity of minerals are presented.
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Smirnov AV, Karmantsov MS, Smirnov KV, Vakhtomin YB, Masterov DV, Tarkhov MA, et al. Terahertz response of thin-film YBCO bolometers. Tech Phys. 2012;57(12):1716–9.
Abstract: The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed.
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Pentin IV, Smirnov AV, Ryabchun SA, Ozhegov RV, Gol’tsman GN, Vaks VL, et al. Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers. Tech Phys. 2012;57(7):971–4.
Abstract: We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature.
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Rasulova GK, Brunkov PN, Pentin IV, Kovalyuk VV, Gorshkov KN, Kazakov AY, et al. Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices. Tech Phys. 2011;56(6):826–30.
Abstract: The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
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Shein KV, Zarudneva AA, Emel’yanova VO, Logunova MA, Chichkov VI, Sobolev AS, et al. Superconducting microstructures with high impedance. Phys Solid State. 2020;62(9):1539–42.
Abstract: The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation.
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