|
|
Verevkin AA, Ptitsina NG, Smirnov KV, Goltsman GN, Gershenson EM, Yngvesson KS. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 55–8.
|
|
|
|
Verevkin AA, Ptitsina NG, Smirnov KV, Gol'tsman GN, Voronov BM, Gershenzon EM, et al. Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 163–6.
|
|
|
|
Verevkin AA, Ptitsina NG, Chulcova GM, Gol'tsman GN, Gershenzon EM, Yngvesson KS. Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions. Surface Science. 1996;361-362:569–73.
Abstract: For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
|
|
|
|
Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Gol’tsman GN, Verevkin AA, et al. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull Russ Acad Sci Phys. 2010;74(1):100–2.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
|
|
|
|
Verevkin AA, Ptitsina NG, Smirnov KV, Voronov BM, Gol’tsman GN, Gershenson EM, et al. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts. Semicond. 1999;33(5):551–4.
Abstract: The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
|
|
