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| Author | Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. | ||||
| Title | Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates | Type | Conference Article | ||
| Year | 1997 | Publication | Proc. 8th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 8th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 245-257 | ||
| Keywords | NbN HEB mixers, fabrication process | ||||
Abstract  |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 276 | |||
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| Author | Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F. | ||||
| Title | Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light | Type | Journal Article | ||
| Year | 1991 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 4 | Issue | 9 | Pages | 453-456 |
| Keywords | NbN HEB detectors | ||||
| Abstract |
The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature. | ||||
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| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 242 | |||
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| Author | Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Superconducting single photon detectors made by local oxidation with an atomic force microscope | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 90 | Issue | 19 | Pages | 191116 (1 t0 3) |
| Keywords | SSPD | ||||
| Abstract |
The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K. The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 423 | |||
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| Author | Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. | ||||
| Title | Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2003 | Publication | Electron. Lett. | Abbreviated Journal | Electron. Lett. |
| Volume | 39 | Issue | 14 | Pages | 1086-1088 |
| Keywords | NbN SSPD, SNSPD, applications | ||||
| Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0013-5194 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1512 | |||
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| Author | Mehdi, I.; Gol'tsman, G.; Putz, P. | ||||
| Title | Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) | Type | Miscellaneous | ||
| Year | 2015 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 5 | Issue | 1 | Pages | 14-15 |
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| Abstract |
THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented. In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/). You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml Yours sincerely |
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| ISSN | 2156-342X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1353 | |||
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