Ryabchun SA, Tretyakov IV, Pentin IV, Kaurova NS, Seleznev VA, Voronov BM, et al. Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron.. 2009;52(8):576–82.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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Tretyakov IV, Ryabchun SA, Maslennikov SN, Finkel MI, Kaurova NS, Seleznev VA, et al. NbN HEB mixer: fabrication, noise temperature reduction and characterization. In: Proc. Basic problems of superconductivity. Moscow-Zvenigorod; 2008.
Abstract: We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer.
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Zolotov PI, Vakhtomin YB, Divochiy AV, Seleznev VA, Smirnov KV. Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc 5th Int Conf Photonics and Information Optics. 2016:115–6.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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Finkel MI, Maslennikov SN, Vachtomin YB, Svechnikov SI, Smirnov KV, Seleznev VA, et al. Hot electron bolometer mixer for 20 – 40 THz frequency range. In: Proc. 16th Int. Symp. Space Terahertz Technol. Göteborg, Sweden; 2005. p. 393–7.
Abstract: The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
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Svechnikov SI, Finkel MI, Maslennikov SN, Vachtomin YB, Smirnov KV, Seleznev VA, et al. Superconducting hot electron bolometer mixer for middle IR range. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 686–7.
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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