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Zinoni C, Alloing B, Li LH, Marsili F, Fiore A, Lunghi L, et al. Single-photonics at telecom wavelengths using nanowire superconducting single photon detectors. In: CLEO/QELS. Optical Society of America; 2007. QTuF6 (1 to 2).
Abstract: Novel single-photon detectors based on NbN superconducting nanostructures promise orders-of- magnitude improvement over InGaAs APDs. We demonstrate this improved performance for the first time by measuring the g(2)(τ) on single photon states produced by a quantum dot at telecom wavelength.
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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Okunev O, et al. Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In: CLEO/QELS. Optical Society of America; 2003. Cmv4.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Elezov MS, Ozhegov RV, Kurochkin YV, Goltsman GN, Makarov VS, Samartsev VV, et al. Countermeasures against blinding attack on superconducting nanowire detectors for QKD. In: EPJ Web Conf. Vol 103.; 2015. 10002 (1 to 2).
Abstract: Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution.
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Divochiy A, Marsili F, Bitauld D, Gaggero A, Leoni R, Mattioli F, et al. Superconducting nanowire photon-number-resolving detector at telecommunication wavelengths. Nat Photon. 2008;2(5):302–6.
Abstract: Optical-to-electrical conversion, which is the basis of the operation of optical detectors, can be linear or nonlinear. When high sensitivities are needed, single-photon detectors are used, which operate in a strongly nonlinear mode, their response being independent of the number of detected photons. However, photon-number-resolving detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication and quantum information processing, the photon-number-resolving functionality is key to many protocols, such as the implementation of quantum repeaters1 and linear-optics quantum computing2. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, such as in long-distance optical communications, fluorescence spectroscopy and optical time-domain reflectometry. We demonstrate here a photon-number-resolving detector based on parallel superconducting nanowires and capable of counting up to four photons at telecommunication wavelengths, with an ultralow dark count rate and high counting frequency.
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Sáysz W, Guziewicz M, Bar J, Wegrzecki M, Grabiec P, Grodecki R, et al. Superconducting NbN nanostructures for single photon quantum detectors [abstract]. In: Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons.; 2008. 160.
Abstract: Practical quantum systems such as quantum communication (QC) or quantum measurement systems require detectors with high speed, high sensitivity, high quantum efficiency (QE), and short deadtimes along with precise timing characteristics and low dark counts. Superconducting single photon detectors (SSPDs) based on ultrathin meander type NbN nanostripes (operated at T=2-5K) are a new and highly promising type of devices fulfilling above requirements. In this paper we present results of the SSPDs nanostructure technological optimization. The base for our detector is thin-film (4nm) NbN layer deposited on 350- P m-thick sapphire substrate The active element of the detector is a meander- nanostructure made of 4-nm-thick and 100-nm-wide NbN stripe, covering 10 u 10 P m 2 area with the filling factor ~0,5. The NbN superconducting films were deposited on sapphire substrates by DC reactive magnetron sputtering whereas the meander element of the detector was patterned by the direct electron-beam lithography followed by reactive-ion etching. To enhance the SSPD efficiency at Ȝ = 1.55 P m, we have performed an approach to increase the absorption of the detector by integrating it with optical resonant cavity. An optical microcavity optimized for absorption of 1.55 P m photons was designed as an one-mirror resonator consisting of a Ȝ/4 dielectric layer and a metallic mirror. The microcavity was deposited on the top of the NbN SSPD meander. The resonator was formed by the dielectric SiO 2 layer and metal mirror made of gold or palladium. Microcavity layers were deposited using a magnetron sputtering system.
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