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Gol’tsman GN, Okunev O, Chulkova G, Lipatov A, Semenov A, Smirnov K, et al. Picosecond superconducting single-photon optical detector. Appl Phys Lett. 2001;79(6):705–7.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Il'in KS, Verevkin AA, Gol'tsman GN, Sobolewski R. Infrared hot-electron NbN superconducting photodetectors for imaging applications. Supercond Sci Technol. 1999;12(11):755–8.
Abstract: We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits.
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de Lara DP, Ejrnaes M, Casaburi A, Lisitskiy M, Cristiano R, Pagano S, et al. Feasibility investigation of NbN nanowires as detector in time-of-flight mass spectrometers for macromolecules of interest in biology (proteins). J Low Temp Phys. 2008;151(3-4):771–6.
Abstract: We are investigating the possibility of using NbN nanowires as detectors in time-of-flight mass spectrometers for investigation of macromolecules of interest in biology (proteins). NbN nanowires could overcome the two major drawbacks encountered so far by cryogenic detectors, namely the low working temperature in the mK region and the slow temporal response. In fact, NbN nanowires can work at 5 K and the response time is at least a factor 10–100 better than that of other cryogenic detectors. We present a feasibility study based on a numerical code to calculate the response of a NbN nanowire. The parameter space is investigated at different energies from IR to macromolecules (i.e. from eV to keV) in order to understand if larger value of film thickness and width can be used for the keV energy region. We also present preliminary experimental results of irradiation with X-ray photons of NbN to simulate the effect of macromolecules of the same energy.
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Sobolewski R, Xu Y, Zheng X, Williams C, Zhang J, Verevkin A, et al. Spectral sensitivity of the NbN single-photon superconducting detector. IEICE Trans Electron. 2002;E85-C(3):797–802.
Abstract: We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices.
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Zhang J, Boiadjieva N, Chulkova G, Deslandes H, Gol'tsman GN, Korneev A, et al. Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron Lett. 2003;39(14):1086–8.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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