Records |
Author |
Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. |
Title |
О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси |
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Journal Article |
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume |
17 |
Issue |
3 |
Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
499-501 |
Keywords |
shallow neutral impurities, capture, inverse distribution function, Si |
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1764 |
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Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
Title |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
Type |
Journal Article |
Year |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume |
23 |
Issue |
8 |
Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
1356-1361 |
Keywords |
Ge, crystallography |
Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Duplicated as 1692 |
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1691 |
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Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
10 |
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1379-1383 |
Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г. |
Title |
Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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Journal Article |
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume |
17 |
Issue |
8 |
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1430-1437 |
Keywords |
BWO spectroscopy, pure semiconductors, residual impurities |
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Duplicated as 1714 |
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1712 |
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Author |
Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. |
Title |
Оже-рекомбинация свободных носителей на мелких донорах в германии |
Type |
Journal Article |
Year |
1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume |
18 |
Issue |
9 |
Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
1684-1686 |
Keywords |
Ge, free carrier recombination |
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1710 |
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