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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
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Journal Article |
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Year |
1984 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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59 |
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2 |
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442-450 |
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Nb HEB |
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The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. |
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RPLAB @ phisix @ |
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983 |
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Algie L. L., Wendell D. S. and Labaar F. |
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Title |
Phase noise and AM noise measurements in the frequency domain |
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1984 |
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Infared and milimetres waves |
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Academic Press. |
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11 |
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239-289 |
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RPLAB @ atomics90 @ |
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1002 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Title |
О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
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Journal Article |
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1984 |
Publication |
Физика и техника полупроводников |
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Физика и техника полупроводников |
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18 |
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3 |
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421-425 |
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Si, phosphorus donors, EPR |
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Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
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