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Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer 2018 Microelectronic Engineering 10.1016/j.mee.2018.03.008 details   doi
Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R. Physics and operation of superconducting single-photon devices 2017 Superconductors at the Nanoscale 10.1515/9783110456806-010 details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures 2010 Bull. Russ. Acad. Sci. Phys. 10.3103/S1062873810010272 details   doi
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 10.1134/1.1434290 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts 1999 Semicond. 10.1134/1.1187726 details   doi
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