Yamashita T, Miki S, Qiu W, Fujiwara M, Sasaki M, Wang Z. Temperature dependent performances of superconducting nanowire single-photon detectors in an ultralow-temperature region. IEEE Trans. Appl. Supercond.. 2010;21(3):336–9.
Abstract: We report on the performance of a fiber-coupled superconducting nanowire single-photon detector (SNSPD) from 4 K down to the ultralow temperature of 16 mK for a 1550 nm wave length. The system detection efficiency (DE) increased with de creasing the temperature and reached the considerably high value of 15% with a dark count rate less than 100 cps below 1.5 K, even without an optical cavity structure. We also observed saturation of the system DE in its bias current dependency at 16 mK, which indicates that the device DE of our SNSPD nearly reached intrinsic DE despite the device having a large active area of 20 μm × 20 μm. The dark count was finite even at 16 mK and the black body radiation becomes its dominant origin in the low temperatures for fiber-coupled devices.
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Yang JKW, Kerman AJ, Dauler EA, Cord B, Anant V, Molnar RJ, et al. Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors. IEEE Trans. Appl. Supercond.. 2009;19(3):318–22.
Abstract: In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.
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Schuck C, Pernice WHP, Minaeva O, Li M, Gol'tsman G, Sergienko AV, et al. Matrix of integrated superconducting single-photon detectors with high timing resolution. IEEE Trans Appl Supercond. 2013;23(3):2201007.
Abstract: We demonstrate a large grid of individually addressable superconducting single photon detectors on a single chip. Each detector element is fully integrated into an independent waveguide circuit with custom functionality at telecom wavelengths. High device density is achieved by fabricating the nanowire detectors in traveling wave geometry directly on top of silicon-on-insulator waveguides. Our superconducting single photon detector matrix includes detector designs optimized for high detection efficiency, low dark count rate, and high timing accuracy. As an example, we exploit the high timing resolution of a particularly short nanowire design to resolve individual photon round-trips in a cavity ring-down measurement of a silicon ring resonator.
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Gol’tsman G, Okunev O, Chulkova G, Lipatov A, Dzardanov A, Smirnov K, et al. Fabrication and properties of an ultrafast NbN hot-electron single-photon detector. IEEE Trans Appl Supercond. 2001;11(1):574–7.
Abstract: A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Korneev AA, Korneeva YP, Mikhailov MY, Pershin YP, Semenov AV, Vodolazov DY, et al. Characterization of MoSi superconducting single-photon detectors in the magnetic field. IEEE Trans Appl Supercond. 2015;25(3):2200504 (1 to 4).
Abstract: We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.
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