Dube I, Jiménez D, Fedorov G, Boyd A, Gayduchenko I, Paranjape M, et al. Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors. Carbon. 2015;87:330–7.
Abstract: Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
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Il'in KS, Lindgren M, Currie MA, Semenov D, Gol'tsman GN, Sobolewski R, et al. Picosecond hot-electron energy relaxation in NbN superconducting photodetectors. Appl Phys Lett. 2000;76(19):2752–4.
Abstract: We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect.
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Gershenzon EM, Gol'tsman GN, Semenov AD, Sergeev AV. Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation. Solid State Communications. 1990;76(4):493–7.
Abstract: The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
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Шангина ЕЛ, Смирнов КВ, Морозов ДВ, Ковалюк ВВ, Гольцман ГН, Веревкин АА, et al. Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs. Изв РАН Сер Физ. 2010;74(1):110–2.
Abstract: Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.
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Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Gol’tsman GN, Verevkin AA, et al. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull Russ Acad Sci Phys. 2010;74(1):100–2.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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