Gayduchenko IA, Moskotin MV, Matyushkin YE, Rybin MG, Obraztsova ED, Ryzhii VI, et al. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts. In: Materials Today: Proc. Vol 5.; 2018. p. 27301–6.
Abstract: We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
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Belosevich VV, Gayduchenko IA, Titova NA, Zhukova ES, Goltsman GN, Fedorov GE, et al. Response of carbon nanotube film transistor to the THz radiation. In: EPJ Web Conf. Vol 195.; 2018. 05012 (1 to 2).
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Tretyakov I, Kaurova N, Raybchun S, Goltsman GN, Silaev AA. Technology for NbN HEB based multipixel matrix of THz range. In: EPJ Web Conf. Vol 195.; 2018. 05011.
Abstract: The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
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Sidorova MV, Kozorezov AG, Semenov AV, Korneev AA, Chulkova GM, Korneeva YP, et al. Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film [Internet].; 2018 [cited 2024 Jul 7].arXiv:1607.07321v4 [physics.ins-det]
Abstract: We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques.
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Saveskul NA, Titova NA, Baeva EM, Semenov AV, Lubenchenko AV, Saha S, et al. Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder. Phys Rev Applied. 2019;12(5):054001.
Abstract: We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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