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Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Heating of quasiparticles in a superconducting film in the resistive state |
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1981 |
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JETP Lett. |
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JETP Lett. |
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34 |
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5 |
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268-271 |
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1716 |
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Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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Journal Article |
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Year |
1982 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
36 |
Issue |
7 |
Pages |
296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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Journal Article |
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Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
33 |
Issue |
11 |
Pages |
574 |
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Keywords |
Ge, excitons, photoconductivity |
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1718 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Year |
1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
Issue |
5 |
Pages |
185-186 |
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Ge, Si, neutral impurity atom, binding energy |
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no |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Transitions of electrons between excited states of donors in germanium |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
2 |
Pages |
63-65 |
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Keywords |
Ge, donors, excited states |
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1740 |
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