| Records |
| Author |
Semenov, A. D.; Gol’tsman, G. N. |
| Title |
Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
Type |
Journal Article |
| Year |
2000 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume  |
87 |
Issue |
1 |
Pages |
502-510 |
| Keywords |
NbN HEB mixers, nonthermal |
| Abstract |
We present an analysis of a diffusion-cooled hot-electron detector fabricated from clean superconducting material with low transition temperature. The distinctive feature of a clean material, i.e., material with large electron mean free path, is a relatively weak inelastic electron scattering that is not sufficient for the establishment of an elevated thermodynamic electron temperature when the detector is subjected to irradiation. We propose an athermal model of a diffusion-cooled detector that relies on suppression of the superconducting energy gap by the actual dynamic distribution of excess quasiparticles. The resistive state of the device is caused by the electric field penetrating into the superconducting bridge from metal contacts. The dependence of the penetration length on the energy gap delivers the detection mechanism. The sources of the electric noise are equilibrium fluctuations of the number of thermal quasiparticles and frequency dependent shot noise. Using material parameters typical for A1, we evaluate performance of the device in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have a noise temperature of a few quantum limits and a bandwidth of a few tens of GHz, while the required local oscillator power is in the μW range due to ineffective suppression of the energy gap by quasiparticles with high energies. |
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0021-8979 |
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1558 |
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Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
| Title |
Picosecond superconducting single-photon optical detector |
Type |
Journal Article |
| Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
79 |
Issue |
6 |
Pages |
705-707 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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0003-6951 |
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1543 |
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Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse |
Type |
Journal Article |
| Year |
1995 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
77 |
Issue |
8 |
Pages |
4064-4070 |
| Keywords |
YBCO HTS switches |
| Abstract |
A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
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0021-8979 |
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no |
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1623 |
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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
76 |
Issue |
3 |
Pages |
1902-1909 |
| Keywords |
YBCO HTS HEB detector, nonequilibrium response |
| Abstract |
Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response. |
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0021-8979 |
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no |
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1637 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
| Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
Type |
Journal Article |
| Year |
2010 |
Publication |
Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
| Volume |
74 |
Issue |
1 |
Pages |
100-102 |
| Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
| Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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