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Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
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Title |
Ultrafast superconducting single-photon optical detectors |
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Conference Article |
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Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
5123 |
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1-11 |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
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SPIE |
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Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
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Advanced Optical Devices, Technologies, and Medical Applications |
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1513 |
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Author |
Minaeva, O.; Fraine, A.; Korneev, A.; Divochiy, A.; Goltsman, G.; Sergienko, A. |
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Title |
High resolution optical time-domain reflectometry using superconducting single-photon detectors |
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Conference Article |
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Year |
2012 |
Publication |
Frontiers in Opt. 2012/Laser Sci. XXVIII |
Abbreviated Journal |
Frontiers in Opt. 2012/Laser Sci. XXVIII |
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Fw3a.39 |
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Keywords |
SSPD, SNSPD, Photodetectors; Fiber characterization; Light beams; Optical time domain reflectometry; Photon counting; Single mode fibers; Single photon detectors; Superconductors |
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We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs. |
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Optical Society of America |
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1237 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
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Title |
Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
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Conference Article |
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2003 |
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CLEO/QELS |
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CLEO/QELS |
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Cmv4 |
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Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
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Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1518 |
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Verevkin, A.; Slysz, W.; Pearlman, A.; Zhang, J.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Currie, M. |
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Title |
Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors |
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Conference Article |
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Year |
2003 |
Publication |
CLEO/QELS |
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CLEO/QELS |
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CThM8 |
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Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Detectors; Photon counting; Quantum communications; Quantum cryptography; Single photon detectors; Superconductors |
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We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1517 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R. |
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Title |
Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders |
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Abstract |
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Year |
2007 |
Publication |
Proc. APS March Meeting |
Abbreviated Journal |
Proc. APS March Meeting |
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Volume |
52 |
Issue |
1 |
Pages |
L9.00013 |
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Abstract |
We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature. |
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1027 |
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