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Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
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Title |
Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
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Journal Article |
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2020 |
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Sci. Rep. |
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Sci. Rep. |
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10 |
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1 |
Pages |
16819 |
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Keywords |
VN HEB |
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Abstract  |
The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. |
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National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia |
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2045-2322 |
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PMID:33033360; PMCID:PMC7546726 |
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1797 |
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Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V. |
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Title |
NbN single-photon detectors with saturated dependence of quantum efficiency |
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Journal Article |
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2018 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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31 |
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3 |
Pages |
035011 (1 to 8) |
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NbN SSPD, SNSPD |
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The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm. |
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0953-2048 |
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1232 |
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Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. |
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Ultrafast superconducting single-photon detector |
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2009 |
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J. Modern Opt. |
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J. Modern Opt. |
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56 |
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15 |
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1670-1680 |
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SSPD, SNSPD |
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The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented. |
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0950-0340 |
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RPLAB @ akorneev @ |
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607 |
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Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K. |
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High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range |
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2019 |
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J. Opt. Soc. Am. B |
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J. Opt. Soc. Am. B |
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36 |
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3 |
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B20 |
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NbN PNR SSPD, SNSPD |
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The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems. |
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0740-3224 |
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1225 |
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Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. |
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Title |
Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons |
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Journal Article |
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2016 |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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115-116 |
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NbN SSPD |
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This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. |
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Russian |
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978-5-7262-2215-8 |
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http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов |
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1811 |
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