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| Author | Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V. | ||||
| Title | NbN single-photon detectors with saturated dependence of quantum efficiency | Type  |
Journal Article | ||
| Year | 2018 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 31 | Issue | 3 | Pages | 035011 (1 to 8) |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1232 | |||
| Permanent link to this record | |||||
| Author | Smirnov, K. V.; Divochiy, A. V.; Vakhtomin, Y. B.; Sidorova, M. V.; Karpova, U. V.; Morozov, P. V.; Seleznev, V. A.; Zotova, A. N.; Vodolazov, D. Y. | ||||
| Title | Rise time of voltage pulses in NbN superconducting single photon detectors | Type |
Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 109 | Issue | 5 | Pages | 052601 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model. D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K). |
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1236 | |||
| Permanent link to this record | |||||
| Author | Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. | ||||
| Title | 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser | Type |
Journal Article | ||
| Year | 2019 | Publication | AIP Advances | Abbreviated Journal | AIP Advances |
| Volume | 9 | Issue | 7 | Pages | 075307 |
| Keywords | NbN HEB mixers, QCL, IR | ||||
| Abstract | We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated. The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy. |
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2158-3226 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1293 | |||
| Permanent link to this record | |||||
| Author | Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. | ||||
| Title | Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation | Type |
Journal Article | ||
| Year | 2020 | Publication | Sci. Rep. | Abbreviated Journal | Sci. Rep. |
| Volume | 10 | Issue | 1 | Pages | 16819 |
| Keywords | VN HEB | ||||
| Abstract | The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. | ||||
| Address | National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2045-2322 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33033360; PMCID:PMC7546726 | Approved | no | ||
| Call Number | Serial | 1797 | |||
| Permanent link to this record | |||||
| Author | Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. | ||||
| Title | Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons | Type |
Journal Article | ||
| Year | 2016 | Publication | Proc. 5th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 5th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 115-116 | ||
| Keywords | NbN SSPD | ||||
| Abstract | This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-7262-2215-8 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов | Approved | no | ||
| Call Number | Serial | 1811 | |||
| Permanent link to this record | |||||