| Records |
| Author |
Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
Type |
Conference Article |
| Year |
2004 |
Publication |
Proc. 29th IRMMW / 12th THz |
Abbreviated Journal |
Proc. 29th IRMMW / 12th THz |
| Volume |
|
Issue |
|
Pages |
329-330 |
Keywords  |
|
| Abstract |
We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
| Address |
Karlsruhe, Germany |
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Karlsruhe, Germany |
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
Serial |
354 |
| Permanent link to this record |
| |
|
| |
| Author |
Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
| Title |
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
Type |
Journal Article |
| Year |
2005 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
| Volume |
39 |
Issue |
9 |
Pages |
1082-1086 |
| Keywords |
2D electron gas, AlGaAs/GaAs heterostructures, mixers |
| Abstract |
Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1063-7826 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1463 |
| Permanent link to this record |
| |
|
| |
| Author |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
| Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
Type |
Journal Article |
| Year |
2010 |
Publication |
Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
| Volume |
74 |
Issue |
1 |
Pages |
100-102 |
| Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
| Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1062-8738 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1217 |
| Permanent link to this record |
| |
|
| |
| Author |
Gol’tsman, G. N.; Smirnov, K. V. |
| Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
Type |
Journal Article |
| Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
| Volume |
74 |
Issue |
9 |
Pages |
474-479 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0021-3640 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
Approved |
no |
| Call Number |
|
Serial |
1541 |
| Permanent link to this record |
| |
|
| |
| Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
| Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
Type |
Journal Article |
| Year |
1999 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
| Volume |
33 |
Issue |
5 |
Pages |
551-554 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1063-7826 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1571 |
| Permanent link to this record |
