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Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G. |
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NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz |
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2002 |
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Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE |
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LETI |
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St.-Petersburg |
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324 |
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Ozhegov, R.; Morozov, D.; Maslennikov, S.; Okunev, O.; Smirnov, K.; Gol'tsman, G. |
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Submillimeter wave range imaging system for registering human body radiation and finding out the things covered under clothes |
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2004 |
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Proc. 3rd Int. exhibition and conf. Non-Destructive Testing Equipment and Devices |
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Moscow |
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345 |
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Ozhegov, R.; Maslennikov, S.; Morozov, D.; Okunev, O.; Smirnov, K.; Gol'tsman, G. |
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Title |
Imaging system for submillimeter wave range |
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Conference Article |
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2004 |
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Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) |
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Moscow |
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RPLAB @ s @ thzimaging_vnksf10_2004 |
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347 |
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Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. |
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NbN HEB mixers for frequencies of 2.5 and 3.8 THz |
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2004 |
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Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) |
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Moscow |
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RPLAB @ s @ qoheb_vnksf10_2004 |
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349 |
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Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
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Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
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Conference Article |
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2004 |
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Proc. 29th IRMMW / 12th THz |
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Proc. 29th IRMMW / 12th THz |
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329-330 |
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We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
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Karlsruhe, Germany |
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Karlsruhe, Germany |
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RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
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354 |
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Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P. |
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Single photon detection system for visible and infrared spectrum range |
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2018 |
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Opt. Lett. |
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Opt. Lett. |
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43 |
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24 |
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6085-6088 |
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We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed. |
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English |
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0146-9592 |
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https://arxiv.org/abs/1807.04273 |
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1227 |
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Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K. |
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Superconducting single-photon detectors made of ultra-thin VN films |
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Conference Article |
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2018 |
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KnE Energy |
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KnE Energy |
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3 |
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3 |
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83-89 |
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We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I |
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1230 |
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Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
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A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
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Journal Article |
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2005 |
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Semicond. |
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Semicond. |
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39 |
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9 |
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1082-1086 |
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2D electron gas, AlGaAs/GaAs heterostructures, mixers |
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Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. |
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1063-7826 |
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1463 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
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Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
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2010 |
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Bull. Russ. Acad. Sci. Phys. |
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Bull. Russ. Acad. Sci. Phys. |
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74 |
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1 |
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100-102 |
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2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
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The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
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Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
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2002 |
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Mater. Sci. Forum |
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Mater. Sci. Forum |
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384-3 |
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107-116 |
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2DEG, AlGaAs/GaAs |
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A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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1536 |
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