| Records |
| Author |
Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
| Title |
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
Type |
Journal Article |
| Year |
2005 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume  |
39 |
Issue |
9 |
Pages |
1082-1086 |
| Keywords |
2D electron gas, AlGaAs/GaAs heterostructures, mixers |
| Abstract |
Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. |
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1063-7826 |
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1463 |
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| Author |
Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
| Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
| Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
| Keywords |
NbN SSPD, SNSPD, applications |
| Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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no |
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1512 |
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| Author |
Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K. |
| Title |
High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range |
Type |
Journal Article |
| Year |
2019 |
Publication |
J. Opt. Soc. Am. B |
Abbreviated Journal |
J. Opt. Soc. Am. B |
| Volume |
36 |
Issue |
3 |
Pages |
B20 |
| Keywords |
NbN PNR SSPD, SNSPD |
| Abstract |
The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems. |
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0740-3224 |
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1225 |
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Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. |
| Title |
Superconducting single-photon ultrathin NbN film detector |
Type |
Journal Article |
| Year |
2005 |
Publication |
Quantum Electronics |
Abbreviated Journal |
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| Volume |
35 |
Issue |
8 |
Pages |
698-700 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. |
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Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
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no |
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383 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
| Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
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Journal Article |
| Year |
1999 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
| Volume |
33 |
Issue |
5 |
Pages |
551-554 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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1571 |
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