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Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. |
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Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter |
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2010 |
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35th Int. Conf. Infrared, Millimeter, and Terahertz Waves |
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1-1 |
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SSPD, SNSPD, HEB |
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We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications. |
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2162-2027 |
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RPLAB @ sasha @ goltsman2010superconducting |
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1028 |
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Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
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Title |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
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Journal Article |
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2016 |
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Appl. Phys. Lett. |
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109 |
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13 |
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132602 |
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HEB mixer, contacts |
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We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
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1107 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
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Technology for NbN HEB based multipixel matrix of THz range |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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195 |
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05011 |
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NbN HEB |
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The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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High resolution THz gas spectrometer based on semiconductor and superconductor devices |
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2017 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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132 |
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02001 (1 to 2) |
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Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
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The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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1328 |
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Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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2019 |
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IRMMW-THz |
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Ag2S quantum dots |
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A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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2162-2035 |
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978-1-5386-8285-2 |
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8874267 |
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1286 |
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