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Author Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N.
Title Picosecond response of a superconducting hot-electron NbN photodetector Type Journal Article
Year 1998 Publication (up) Appl. Supercond. Abbreviated Journal Appl. Supercond.
Volume 6 Issue 7-9 Pages 423-428
Keywords NbN SSPD, SNSPD
Abstract The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0964-1807 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1584
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Author Zhang, Wen; Li, Ning; Jiang, Ling; Miao, Wei; Lin, Zhen-Hui; Yao, Qi-Jun; Shi, Sheng-Cai; Chen, Jian; Wu, Pei-Heng; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N.
Title Noise behaviour of a THz superconducting hot-electron bolometer mixer Type Journal Article
Year 2007 Publication (up) Chinese Phys. Lett. Abbreviated Journal Chinese Phys. Lett.
Volume 24 Issue 6 Pages 1778-1781
Keywords NbN HEB mixers
Abstract A quasi-optical superconducting NbN hot-electron bolometer (HEB) mixer is measured in the frequency range of 0.5–2.5 THz for understanding of the frequency dependence of noise temperature of THz coherent detectors. It has been found that noise temperature increasing with frequency is mainly due to the coupling loss between the quasi-optical planar antenna and the superconducting HEB bridge when taking account of non-uniform distribution of high-frequency current. With the coupling loss corrected, the superconducting HEB mixer demonstrates a noise temperature nearly independent of frequency.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0256-307X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1430
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Author Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K.
Title Achieving high counting rates in superconducting nanowire single-photon detectors Type Conference Article
Year 2006 Publication (up) CLEO/QELS Abbreviated Journal CLEO/QELS
Volume Issue Pages JTuD3 (1 to 2)
Keywords SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors
Abstract Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed.
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Publisher Optical Society of America Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
Notes Approved no
Call Number Serial 1451
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Author Rosfjord, K. M.; Yang, J. K. W.; Dauler, E. A.; Anant, V.; Berggren, K. K.; Kerman, A. J.; Voronov, B. M.; Gol’tsman, G. N.
Title Increased detection efficiencies of nanowire single-photon detectors by integration of an optical cavity and anti-reflection coating Type Conference Article
Year 2006 Publication (up) CLEO/QELS Abbreviated Journal CLEO/QELS
Volume Issue Pages JTuF2 (1 to 2)
Keywords SSPD, SNSPD
Abstract We fabricate and test superconducting NbN-nanowire single-photon detectors with an integrated optical cavity and anti-reflection coating. We design the cavity and coating such as to maximize absorption in the NbN film of the detector.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference
Notes Approved no
Call Number Serial 1452
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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R.
Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
Year 2003 Publication (up) Electron. Lett. Abbreviated Journal Electron. Lett.
Volume 39 Issue 14 Pages 1086-1088
Keywords NbN SSPD, SNSPD, applications
Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-5194 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1512
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