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Author Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. url  isbn
openurl 
  Title Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons Type (down) Journal Article
  Year 2016 Publication Proc. 5th Int. Conf. Photonics and Information Optics Abbreviated Journal Proc. 5th Int. Conf. Photonics and Information Optics  
  Volume Issue Pages 115-116  
  Keywords NbN SSPD  
  Abstract This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-5-7262-2215-8 Medium  
  Area Expedition Conference  
  Notes http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов Approved no  
  Call Number Serial 1811  
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Author Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. url  doi
openurl 
  Title Superconducting detector of IR single-photons based on thin WSi films Type (down) Conference Article
  Year 2016 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 737 Issue Pages 012032  
  Keywords WSi SSPD, SNSPD, NEP  
  Abstract We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1235  
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Author Smirnov, E.; Golikov, A.; Zolotov, P.; Kovalyuk, V.; Lobino, M.; Voronov, B.; Korneev, A.; Goltsman, G. url  doi
openurl 
  Title Superconducting nanowire single-photon detector on lithium niobate Type (down) Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051025  
  Keywords SSPD, SNSPD, lithium niobate, LN  
  Abstract We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s−1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1194  
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Author Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. url  doi
openurl 
  Title Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films Type (down) Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051030  
  Keywords SSPD, SNSPD, VN  
  Abstract We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1228  
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Author Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V. url  doi
openurl 
  Title Electron diffusivity measurements of VN superconducting single-photon detectors Type (down) Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051032  
  Keywords SSPD, SNSPD, VN  
  Abstract The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1229  
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