| Records |
| Author |
Zolotov, P.; Vakhtomin, Yu.; Divochiy, A.; Seleznev, V.; Morozov, P.; Smirnov, K. |
| Title |
High-efficiency single-photon detectors based on NbN films |
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Miscellaneous |
Year  |
2013 |
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SSPD, SNSPD |
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We present our resent results in development and testing of Superconducting Single-Photon Detectors (SSPD) with detection efficiencies greater than 85%. High values of obtained results are assigned to proposed design of the detector with integrated resonator structure, including two-layer optical cavity and anti-reflective coating (ARC). |
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1254 |
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Zolotov, P.; Divochiy, A.; Korneeva, Yu.; Vakhtomin, Yu.; Seleznev, V.; Smirnov, K. |
| Title |
Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range |
Type |
Miscellaneous |
| Year |
2015 |
Publication |
3th ICQT |
Abbreviated Journal |
3th ICQT |
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SSPD, SNSPD |
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Hotel Ukraina (Radisson), Moscow |
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1253 |
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Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
| Title |
Superconducting detector of IR single-photons based on thin WSi films |
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Conference Article |
| Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
737 |
Issue |
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Pages |
012032 |
| Keywords |
WSi SSPD, SNSPD, NEP |
| Abstract |
We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). |
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1742-6588 |
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no |
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1235 |
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Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. |
| Title |
Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons |
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Journal Article |
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2016 |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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115-116 |
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NbN SSPD |
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This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. |
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Russian |
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978-5-7262-2215-8 |
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http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов |
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1811 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Seleznev, V. A.; Smirnov, K. V. |
| Title |
Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range |
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Conference Article |
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2017 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
917 |
Issue |
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Pages |
062037 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range. |
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1742-6588 |
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no |
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1233 |
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