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Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
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Title |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
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Conference Article |
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Year |
1996 |
Publication  |
Czech J. Phys. |
Abbreviated Journal |
Czech J. Phys. |
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Volume |
46 |
Issue |
S5 |
Pages |
2489-2490 |
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Keywords |
Al, Be, Nb films |
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Abstract |
The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). |
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0011-4626 |
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1767 |
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Author |
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
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Title |
Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
Type |
Conference Article |
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Year |
1996 |
Publication |
Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
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Volume |
46 |
Issue |
S2 |
Pages |
857-858 |
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Keywords |
NbC films |
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Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
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0011-4626 |
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1617 |
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Lobanov, Y. V.; Shcherbatenko, M. L.; Semenov, A. V.; Kovalyuk, V. V.; Korneev, A. A.; Goltsman, G. N.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Title |
Heterodyne spectroscopy with superconducting single-photon detector |
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Conference Article |
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Year |
2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
132 |
Issue |
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Pages |
01005 |
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Keywords |
SSPD mixer, SNSPD |
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We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length. |
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2100-014X |
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1205 |
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Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
Issue |
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Pages |
02009 |
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Keywords |
grating coupler, SiO2 |
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The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform. |
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2100-014X |
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1188 |
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Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
Issue |
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Pages |
03012 |
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Keywords |
e-beam lithography, Si3N4 |
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In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. |
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2100-014X |
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1189 |
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Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Integration of nanodiamonds with NV-centers on optical silicon nitride structures |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
Issue |
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Pages |
03013 |
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Keywords |
nanodiamonds, NV-centers, Si3N4 |
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In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources. |
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2100-014X |
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1190 |
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Korneev, A.; Kovalyuk, V.; An, P.; Golikov, A.; Zubkova, E.; Ferrari, S.; Kahl, O.; Pernice, W.; Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Title |
Superconducting single-photon detector for integrated waveguide spectrometer |
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Conference Article |
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2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
190 |
Issue |
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04009 |
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Keywords |
SSPD, SNSPD, Si3N4 waveguides, waveguide spectrometer |
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We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector. |
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2100-014X |
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1199 |
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Elezov, M.; Scherbatenko, M.; Sych, D.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Towards the fiber-optic Kennedy quantum receiver |
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Conference Article |
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2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
Issue |
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Pages |
03011 (1 to 2) |
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Keywords |
SSPD, SNSPD, Kennedy quantum receiver |
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We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit. |
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1288 |
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Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
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Title |
Response of carbon nanotube film transistor to the THz radiation |
Type |
Conference Article |
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Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
195 |
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05012 (1 to 2) |
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field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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1317 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
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Title |
Technology for NbN HEB based multipixel matrix of THz range |
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Conference Article |
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2018 |
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EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
195 |
Issue |
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Pages |
05011 |
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Keywords |
NbN HEB |
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Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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