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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I.
Title Effect of a strong magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1978 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 11 Issue 12 Pages 1395-1397
Keywords InSb, spectrum of donors, strong magnetic field
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Call Number Serial 1725
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G.
Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 25 Issue 12 Pages 539-543
Keywords Ge, shallow impurities, excited states
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Call Number Serial 1726
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title Effect of a high magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1977 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov
Volume 11 Issue 12 Pages 2373-2375
Keywords InSb, energy spectrum, donors, high magnetic field
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Language Russian Summary Language Original Title
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Notes Воздействие сильного магнитного поля на спектр доноров в InSb Approved no
Call Number Serial 1729
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I.
Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
Year 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 24 Issue 3 Pages 125-128
Keywords n-Ge, cyclotron-impurity resonance
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Call Number Serial 1730
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title Investigation of excited donor states in GaAs Type Journal Article
Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 7 Issue 10 Pages 1248-1250
Keywords GaAs, excited donor states
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Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
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Call Number Serial 1733
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
Title Energy spectrum of free excitons in germanium Type Journal Article
Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 18 Issue 3 Pages 93
Keywords Ge, free excitons, energy spectrum
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Call Number Serial 1734
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Author Goltsman, G.
Title Simple method for stabilizing power of submillimetric spectrometer Type Journal Article
Year 1972 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta
Volume Issue 1 Pages 136
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia Place of Publication Editor
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Call Number Serial 1738
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 5 Pages 185-186
Keywords Ge, Si, neutral impurity atom, binding energy
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Call Number Serial 1739
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Transitions of electrons between excited states of donors in germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 2 Pages 63-65
Keywords Ge, donors, excited states
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Call Number Serial 1740
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
Title Germanium hot-electron narrow-band detector Type Journal Article
Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics
Volume 16 Issue 8 Pages 1346
Keywords Ge HEB detectors
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Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor
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Call Number Serial 1741
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 6 Pages 241
Keywords Ge, gamma irradiation, defects, impurities
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Call Number Serial 1742
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Author Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С.
Title Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца Type Journal Article
Year 1985 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 19 Issue 9 Pages 1696-1698
Keywords uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation
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Call Number Serial 1760
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Author Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.
Title Об одном способе определения концентрации глубоких примесей в германии Type Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 10 Pages 1896-1898
Keywords Ge, deep impurities
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Call Number Serial 1762
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И.
Title Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда Type Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 10 Pages 1873-1876
Keywords compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance
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Call Number Serial 1763
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Author Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б.
Title О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси Type Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 3 Pages 499-501
Keywords shallow neutral impurities, capture, inverse distribution function, Si
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Call Number Serial 1764
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