| Records |
| Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
| Title |
Germanium hot-electron narrow-band detector |
Type |
Journal Article |
| Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
| Volume |
16 |
Issue |
8 |
Pages |
1346 |
Keywords  |
Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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| Author |
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
| Title |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
Type |
Journal Article |
| Year |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
23 |
Issue |
8 |
Pages |
1356-1361 |
| Keywords |
Ge, crystallography |
| Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Russian |
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Duplicated as 1692 |
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1691 |
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| Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
| Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
| Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
| Volume |
23 |
Issue |
8 |
Pages |
843-846 |
| Keywords |
Ge, crystallography |
| Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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1692 |
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| Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
| Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
40 |
Issue |
2 |
Pages |
311-315 |
| Keywords |
Ge, cyclotron resonance |
| Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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no |
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Serial |
1768 |
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| Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
| Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume |
10 |
Issue |
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Pages |
1379-1383 |
| Keywords |
Ge, cyclotron resonance, charged impurities, |
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no |
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Serial |
1772 |
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| Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
| Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume |
6 |
Issue |
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Pages |
362-363 |
| Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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| Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
| Title |
Об одном способе определения концентрации глубоких примесей в германии |
Type |
Journal Article |
| Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
17 |
Issue |
10 |
Pages |
1896-1898 |
| Keywords |
Ge, deep impurities |
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no |
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Serial |
1762 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
2 |
Pages |
63-65 |
| Keywords |
Ge, donors, excited states |
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no |
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Serial |
1740 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N. |
| Title |
Zeeman effect in excited-states of donors in germanium |
Type |
Journal Article |
| Year |
1972 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
6 |
Issue |
3 |
Pages |
509 |
| Keywords |
Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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no |
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Serial |
1737 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Kinetics of electron and hole binding into excitons in germanium |
Type |
Journal Article |
| Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
57 |
Issue |
2 |
Pages |
369-376 |
| Keywords |
Ge, electron and hole binding |
| Abstract |
The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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no |
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Serial |
1711 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
| Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
16 |
Issue |
4 |
Pages |
161-162 |
| Keywords |
Ge, energy spectrum, free excitons |
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no |
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Serial |
1736 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
Type |
Journal Article |
| Year |
1982 |
Publication |
Optics and Spectroscopy |
Abbreviated Journal |
Optics and Spectroscopy |
| Volume |
52 |
Issue |
4 |
Pages |
454-455 |
| Keywords |
Ge, exciton photoconduction |
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no |
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Serial |
1715 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
| Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
33 |
Issue |
11 |
Pages |
574 |
| Keywords |
Ge, excitons, photoconductivity |
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Serial |
1718 |
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Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. |
| Title |
Оже-рекомбинация свободных носителей на мелких донорах в германии |
Type |
Journal Article |
| Year |
1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
18 |
Issue |
9 |
Pages |
1684-1686 |
| Keywords |
Ge, free carrier recombination |
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Russian |
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no |
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Serial |
1710 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
Type |
Journal Article |
| Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
43 |
Issue |
1 |
Pages |
116-122 |
| Keywords |
Ge, free excitons |
| Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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